US2017330643A1PendingUtilityA1
Ag alloy film for reflecting electrode or wiring electrode, reflecting electrode or wiring electrode, and ag alloy sputtering target
Est. expiryJun 26, 2033(~6.9 yrs left)· nominal 20-yr term from priority
H10W 20/4435C22F 1/14C22C 5/06C23C 14/3414H01B 1/02H01L 51/5218H10K 59/80518C23C 14/5806H01J 37/3429C22F 1/00Y10T428/12896C23C 14/086C23C 14/185
47
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Claims
Abstract
An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity and having exceptional oxidation resistance under cleaning treatments such as an O 2 plasma treatment or UV irradiation, wherein the Ag alloy film contains either In in an amount of larger than 2.0 atomic % to 2.7 atomic % or smaller; or Zn in an amount of larger than 2.0 atomic % to 3.5 atomic % or smaller; or both. The Ag alloy film may further contain Bi in an amount of 0.01 to 1.0 atomic %.
Claims
exact text as granted — not AI-modified1 - 12 . (canceled)
13 . An Ag alloy sputtering target, comprising:
In in an amount larger than 2.0 atomic % and smaller than or equal to 2.7 atomic %, and Bi in an amount larger than or equal to 0.01 atomic % and smaller than or equal to 1.0 atomic %.Join the waitlist — get patent alerts
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