Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition

Abstract

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.

1 - 11 . (canceled) 
     
     
         12 . A monomer for a hardmask composition represented by the following Chemical Formula 1: 
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 1, 
         A and A′ are the same or different and are each independently a substituted or unsubstituted aromatic group, 
         at least one of A and A′ is a substituted or unsubstituted perylene group, a substituted or unsubstituted benzoperylene group, or a substituted or unsubstituted coronene group, 
         L is a single bond or a substituted or unsubstituted C1 to C6 alkylene group, and 
         n is an integer ranging from 1 to 5, provided that when at least one of A and A′ is a substituted or unsubstituted perylene group, n is an interger ranging from 2 to 5. 
       
     
     
         13 . The monomer for a hardmask composition of  claim 12 , wherein the aromatic group comprises at least one selected from the following Group 1: 
       [Group 1] 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
         14 . The monomer for a hardmask composition of  claim 12 , wherein the monomer is represented by the following Chemical Formula 1a, 1b or 1c: 
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 1 a, 1 b , and 1 c, 
         A 1  to A 4  are each independently a substituted or unsubstituted benzene group, a substituted or unsubstituted naphthalene group, a substituted or unsubstituted pyrene group, a substituted or unsubstituted perylene group, a substituted or unsubstituted benzoperylene group, a substituted or unsubstituted coronene group, or a combination thereof, 
         at least one of A 1  and A 2  of Chemical Formula 1a is a substituted or unsubstituted benzoperylene group, or a substituted or unsubstituted coronene group, 
         at least one of A 1  to A 3  of Chemical Formula 1 b is a substituted or unsubstituted perylene group, a substituted or unsubstituted benzoperylene group, or a substituted or unsubstituted coronene group, 
         at least one of A 1  to A 4  of Chemical Formula 1c is a substituted or unsubstituted perylene group, a substituted or unsubstituted benzoperylene group, or a substituted or unsubstituted coronene group, and 
         L 1  to L 3  are each independently a single bond or a substituted or unsubstituted Cl to C6 alkylene group. 
       
     
     
         15 . The monomer for a hardmask composition of  claim 14 , wherein the monomer is represented by the following Chemical Formula 1aa, 1bb, or 1cc,: 
       
         
           
           
               
               
           
         
       
     
     
         16 . The monomer for a hardmask composition of  claim 12 , wherein the monomer has a molecular weight of about 200 to 3,000. 
     
     
         17 . A hardmask composition, comprising
 the monomer of claim  1 , and   a solvent.   
     
     
         18 . The hardmask composition of  claim 17 , wherein the monomer is included in an amount of about 0.1 to 30 wt % based on the total amount of the hardmask composition. 
     
     
         19 . A method of forming a pattern, comprising:
 providing a material layer on a substrate,   applying the hardmask composition according to claim  6  on the material layer,   heat-treating the hardmask composition to provide a hardmask layer,   forming a silicon-containing thin layer on the hardmask layer,   forming a photoresist layer on the silicon-containing thin layer,   forming a photoresist pattern by exposing and developing the photoresist layer,   selectively removing the silicon-containing thin layer and the hardmask layer using the photoresist pattern to expose a part of the material layer, and   etching an exposed part of the material layer.   
     
     
         20 . The method of  claim 19 , wherein the hardmask composition is applied using a spin-on coating method. 
     
     
         21 . The method of  claim 19 , wherein, in the heat-treating of the hardmask composition to provide the hardmask layer, the hardmask composition is heat-treated at about 100 to 500° C.