ALUMINUM NITRIDE (AlN) DEVICES WITH INFRARED ABSORPTION STRUCTURAL LAYER

Abstract

A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

1 . A micro-electro-mechanical system device, comprising:
 a silicon substrate comprising:
 a piezoelectric layer disposed over a device layer; 
 a metal conductivity in contact with the piezoelectric layer; 
 a bond layer that partially contacts the metal conductivity layer; and 
 a stand-off formed on the silicon substrate; 
   wherein the silicon substrate is bonded to a base substrate comprising an electrode that provides an electrical connection to the metal conductivity layer.   
     
     
         2 . The device of  claim 1 , wherein the stand-off is formed on the piezoelectric layer. 
     
     
         3 . The device of  claim 1 , wherein the stand-off is formed of a silicon layer deposited on the device layer. 
     
     
         4 . The device of  claim 1 , further comprising an insulating layer disposed over the device layer. 
     
     
         5 . (canceled) 
     
     
         6 . (canceled) 
     
     
         7 . (canceled) 
     
     
         8 . The device of  claim 1 , wherein the base substrate comprises an electrical circuit. 
     
     
         9 . The device of  claim 1 , further comprising a dielectric layer interposed between the piezoelectric layer and the metal conductive layer. 
     
     
         10 . The device of  claim 1 , wherein the bond layer comprises germanium. 
     
     
         11 . The device of  claim 1 , wherein the electrical connection is established through a eutectic bond. 
     
     
         12 . The device of  claim 1 , wherein the piezoelectric layer comprises aluminum nitride. 
     
     
         13 . The device of  claim 1 , wherein the piezoelectric layer comprises: an aluminum nitride (AlN) seed layer, a bottom metal layer, and an aluminum nitride (AlN) layer. 
     
     
         14 . The device of  claim 1 , further comprising an infra-red (IR) absorption layer deposited on a portion of the device layer. 
     
     
         15 . The device of  claim 1 , further comprising an infra-red (IR) absorption layer deposited on a portion of the piezoelectric layer. 
     
     
         16 . A method, comprising:
 overlaying a piezoelectric layer on a device layer;   overlaying a metal conductivity layer on the piezoelectric layer;   partially overlaying a bond layer on the metal conductivity layer;   patterning a stand-off on the device layer; and   establishing an electrical connection between the metal conductivity layer and a silicon substrate.   
     
     
         17 . The method of  claim 16 , further comprising depositing a silicon dioxide layer to form the stand-off. 
     
     
         18 . The method of  claim 16 , further comprising depositing a silicon dioxide layer to form a stand-off positioned on the piezoelectric layer. 
     
     
         19 . The method of  claim 16 , further comprising performing patterning and etching of the piezoelectric layer to form a sidewall. 
     
     
         20 . The method of  claim 19 , further comprising interposing a first dielectric layer between the piezoelectric layer and the metal conductive layer. 
     
     
         21 . The method of  claim 20 , further comprising disposing a second dielectric layer on the sidewall of the piezoelectric layer. 
     
     
         22 . (canceled) 
     
     
         23 . (canceled) 
     
     
         24 . (canceled) 
     
     
         25 . The method of  claim 16 , further comprising depositing an infra-red (IR) absorption layer on a selected portion of the device layer. 
     
     
         26 . The method of  claim 16 , further comprising depositing an infra-red (IR) absorption layer on a selected portion of the piezoelectric layer. 
     
     
         27 . A micro-electro-mechanical device, comprising:
 a silicon substrate bonded to a base substrate, comprising:
 an electrode on the base substrate that electrically couples a conductivity layer that overlays the silicon substrate; 
 the conductivity layer on the silicon substrate is formed on a piezoelectric layer on the silicon substrate; 
 the piezoelectric layer on the silicon substrate is formed on a device layer comprising a stand-off patterned on the silicon substrate; and 
 the device layer is bonded to an dielectric layer that is deposited over a surface of a handle layer and a void formed through the handle layer.