US2017323855A1PendingUtilityA1

Laser scribe structures for a wafer

Assignee: GLOBALFOUNDRIES INCPriority: May 5, 2016Filed: May 12, 2017Published: Nov 9, 2017
Est. expiryMay 5, 2036(~9.8 yrs left)· nominal 20-yr term from priority
H10P 95/066H10P 95/062H10P 34/42H10W 46/503H10W 46/401H10W 46/201H10W 46/106H10W 46/103H10W 42/00H10W 20/092H10W 46/00H01L 23/544H01L 2223/5446
49
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Claims

Abstract

Structures that include an identification marking and fabrication methods for such structures. A chip is formed within a usable area of a wafer, and a marking region is formed on the wafer. The marking region is comprised of a conductor used to form a last metal layer of an interconnect structure for the chip. The identification marking is formed in the conductor of the marking region. After the identification marking is formed, a dielectric layer is deposited on the marking region. The dielectric layer on the marking region is planarized.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A structure comprising:
 a wafer including a usable area, a wiring region, and a chip within the usable area;   a marking region on the wafer;   an identification marking in the marking region; and   a dielectric layer on the marking region and the wiring region, the dielectric layer having a planarized top surface.   
     
     
         2 . The structure of  claim 1  wherein the marking region is comprised of a metal. 
     
     
         3 . The structure of  claim 2  wherein the wiring region is comprised of the metal. 
     
     
         4 . The structure of  claim 3  wherein the wiring region is a topmost metal layer. 
     
     
         5 . The structure of  claim 1  wherein the marking region is comprised of a metal, and the identification marking includes a plurality of elements that are laser scribed into the metal. 
     
     
         6 . The structure of  claim 1  wherein the identification marking includes a raised portion and a recessed portion that are covered by the dielectric layer. 
     
     
         7 . The structure of  claim 6  further comprising:
 a substrate adhesively bonded to the planarized top surface of the dielectric layer. 
 
     
     
         8 . The structure of  claim 1  further comprising:
 a substrate adhesively bonded to the planarized top surface of the dielectric layer. 
 
     
     
         9 . The structure of  claim 8  wherein the identification marking is located radially inward from an outer peripheral edge of the wafer. 
     
     
         10 . The structure of  claim 1  wherein the marking region is outside of the usable area. 
     
     
         11 . The structure of  claim 1  wherein a portion of the wafer underlying the marking region is free of device structures. 
     
     
         12 . The structure of  claim 1  wherein the marking region is not used for making electrical connections, and the marking region is not a component of the chip.

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