US2017323855A1PendingUtilityA1
Laser scribe structures for a wafer
Est. expiryMay 5, 2036(~9.8 yrs left)· nominal 20-yr term from priority
H10P 95/066H10P 95/062H10P 34/42H10W 46/503H10W 46/401H10W 46/201H10W 46/106H10W 46/103H10W 42/00H10W 20/092H10W 46/00H01L 23/544H01L 2223/5446
49
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Claims
Abstract
Structures that include an identification marking and fabrication methods for such structures. A chip is formed within a usable area of a wafer, and a marking region is formed on the wafer. The marking region is comprised of a conductor used to form a last metal layer of an interconnect structure for the chip. The identification marking is formed in the conductor of the marking region. After the identification marking is formed, a dielectric layer is deposited on the marking region. The dielectric layer on the marking region is planarized.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A structure comprising:
a wafer including a usable area, a wiring region, and a chip within the usable area; a marking region on the wafer; an identification marking in the marking region; and a dielectric layer on the marking region and the wiring region, the dielectric layer having a planarized top surface.
2 . The structure of claim 1 wherein the marking region is comprised of a metal.
3 . The structure of claim 2 wherein the wiring region is comprised of the metal.
4 . The structure of claim 3 wherein the wiring region is a topmost metal layer.
5 . The structure of claim 1 wherein the marking region is comprised of a metal, and the identification marking includes a plurality of elements that are laser scribed into the metal.
6 . The structure of claim 1 wherein the identification marking includes a raised portion and a recessed portion that are covered by the dielectric layer.
7 . The structure of claim 6 further comprising:
a substrate adhesively bonded to the planarized top surface of the dielectric layer.
8 . The structure of claim 1 further comprising:
a substrate adhesively bonded to the planarized top surface of the dielectric layer.
9 . The structure of claim 8 wherein the identification marking is located radially inward from an outer peripheral edge of the wafer.
10 . The structure of claim 1 wherein the marking region is outside of the usable area.
11 . The structure of claim 1 wherein a portion of the wafer underlying the marking region is free of device structures.
12 . The structure of claim 1 wherein the marking region is not used for making electrical connections, and the marking region is not a component of the chip.Join the waitlist — get patent alerts
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