Light incident angle controllable electronic device and manufacturing method thereof

Abstract

Disclosed herein is a method of changing characteristics of an electronic device, including the steps of: applying light to an electronic device through a plurality of media having different refractive indexes from each other, the electrical characteristics of the electronic device being changed depending on the amount of incident light; and changing an incident angle of light applied the electronic device to adjust the amount of incident light. There is provided a method of providing light incident angle dependency by a simple procedure of accumulating additional media in various electronic devices. In the method, the light incident angle selectivity of the electronic device can be maintained even when the inclination angle of the device is changed depending on the axis parallel to the incident direction of light even though the incident direction thereof is fixed. This means that the performance of the device can be controlled only by changing the inclination angle of the device without greatly changing the dynamic state of the device. Further, since the movement speed of photons is higher than that of electrons and the signal interference of photons is lower than that of electrons, an additional effect of increasing the operating speed of the device or decreasing the size of the device can be expected.

1 . A method of changing characteristics of an electronic device, comprising the steps of:
 applying light to an electronic device to penetrate a plurality of transparent media having different refractive indexes from each other, the electrical characteristics of the electronic device being changed depending on the amount of incident light; and   changing an incident angle of light applied to the electronic device to adjust the amount of incident light.   
     
     
         2 . The method of  claim 1 , wherein a first medium having a first refractive index is disposed on the surface of the electronic device, and the light penetrates a second medium having a second refractive index larger than the first refractive index and then penetrates the first medium disposed on the surface of the electronic device to allow the light to be applied to the electronic device. 
     
     
         3 . The method of  claim 2 , wherein the first medium includes gas. 
     
     
         4 . The method of  claim 3 , wherein the first medium is a hydrophobic layer including gas. 
     
     
         5 . The method of  claim 2 , wherein the first medium is a hydrophobic layer including a nanostructure treated with fatty acid, an SAM material or a compound having low surface energy. 
     
     
         6 . The method of  claim 5 , wherein the compound having low surface energy is a fluorine compound. 
     
     
         7 . The method of  claim 5 , wherein the nanostructure is a nanowire, nanotube or nanorod disposed on the surface of the electronic device. 
     
     
         8 . The method of  claim 5 , wherein the nanostructure includes at least one ingredient selected from the group consisting of Al 2 O 3 , SiO 2 , TiO 2 , VO, VO 2 , V 2 O 3 , V 2 O 5 , MnO, MnO 2 , FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 2 O 3 , Co 3 O 4 , NiO, CuO, Cu 2 O, Y 2 O 3 , ZrO 2 , NbO, NbO 2 , Nb 2 O 5 , MoO 2 , MoO 3 , RuO 2 , PdO, AgO, CdO, In 2 O 3 , SnO, SnO 2 , Sb 2 O 3 , Sb 2 O 5 , HfO 2 , Ta 2 O 5 , WO 3 , IrO 2 , NiO, NO, N 2 O and MgO. 
     
     
         9 . The method of  claim 2 , wherein the second medium is a liquid. 
     
     
         10 . The method of  claim 9 , wherein the liquid is water. 
     
     
         11 . The method of  claim 1 , wherein the light is emitted from a light source selected from the group consisting of an incandescent lamp, a halogen lamp, a discharge lamp and an LED lamp. 
     
     
         12 . The method of  claim 1 , wherein the light is totally-reflected depending on an incident angle. 
     
     
         13 . The method of  claim 1 , wherein the electronic device exhibits resistor characteristics when the light is actually totally-reflected. 
     
     
         14 . The method of  claim 1 , wherein the electronic device exhibits resistive memory characteristics when the light is incident on the electronic device. 
     
     
         15 . The method of  claim 1 , wherein the incident angle is changed depending on the change in the position of a light source or the gradient of the electronic device 
     
     
         16 . The method of  claim 1 , wherein the characteristics of the electronic device are reversibly changed at a specific incident angle. 
     
     
         17 - 20 . (canceled)