Chemical mechanical polishing apparatus

Abstract

The present disclosure discloses a chemical mechanical polishing apparatus including a polishing machine platform, an electrode film, a polishing pad and a wafer carrier. The electrode film has a first single electrode structure and is disposed on the polishing machine platform. The polishing pad is disposed on the electrode film. The wafer carrier is disposed on the polishing machine platform. In particular, the first single electrode structure generates a first homopolar electric field on the polishing pad.

What is claimed is: 
     
         1 . A chemical mechanical polishing apparatus, comprising:
 a polishing machine platform;   an electrode film having a first single electrode structure and being disposed on the polishing machine platform;   a polishing pad disposed on the electrode film; and   a wafer carrier disposed on the polishing machine platform;   wherein the first single electrode structure generates a first homopolar electric field on the polishing pad.   
     
     
         2 . The chemical mechanical polishing apparatus according to  claim 1 , further comprising a second electrode structure disposed on the polishing pad, the location of the second electrode structure corresponding to the location of the electrode film. 
     
     
         3 . The chemical mechanical polishing apparatus according to  claim 2 , wherein the wafer carrier has a mounting surface for mounting a wafer, and a second electrode structure is disposed on the mounting surface. 
     
     
         4 . The chemical mechanical polishing apparatus according to  claim 2 , wherein the second electrode structure generates a second homopolar electric field on the polishing pad; wherein the first homopolar electric field has a polarity different from the second homopolar electric field. 
     
     
         5 . The chemical mechanical polishing apparatus according to  claim 1 , wherein the electrode film is disposed on a bottom surface of the polishing pad. 
     
     
         6 . The chemical mechanical polishing apparatus according to  claim 1 , wherein the electrode film is disposed on the top surface of the polishing machine platform. 
     
     
         7 . The chemical mechanical polishing apparatus according to  claim 1 , wherein the electrode film is disposed within the polishing machine platform. 
     
     
         8 . The chemical mechanical polishing apparatus according to  claim 1 , wherein the electrode film further includes a base layer and a protective layer, the first single electrode structure being disposed on the base layer and being covered by the protective layer. 
     
     
         9 . The chemical mechanical polishing apparatus according to  claim 8 , wherein the protective layer is a nonconductive glue attached to the bottom surface of the polishing pad. 
     
     
         10 . The chemical mechanical polishing apparatus according to  claim 8 , wherein the first single electrode structure includes a first electrode wire and a second electrode wire staggered to each other, the height of the first electrode wire relative to the base layer being different from the height of the second electrode wire relative to the base layer. 
     
     
         11 . The chemical mechanical polishing apparatus according to  claim 1 , wherein the first single electrode structure is a flat metal layer. 
     
     
         12 . The chemical mechanical polishing apparatus according to  claim 1 , wherein the first single electrode structure includes a plurality of metal wires that are coplanar and separated from each other. 
     
     
         13 . The chemical mechanical polishing apparatus according to  claim 1 , wherein the electrode film is circular and covers smoothly and completely on the polishing machine platform, and the first single electrode structure is formed by a coplanar metal conductor. 
     
     
         14 . The chemical mechanical polishing apparatus according to  claim 1 , further including an electric field enhancement structure being disposed on the electrode film and having a plurality of conductors that are adjacent to each other. 
     
     
         15 . The chemical mechanical polishing apparatus according to  claim 14 , wherein each of the plurality of conductors has two opposite ends separated from each other. 
     
     
         16 . A chemical mechanical polishing apparatus, comprising:
 a polishing machine platform;   a polishing pad disposed on the electrode film;   a wafer carrier disposed on the polishing machine platform and having a mounting surface for mounting a wafer; and   an electrode film having a first single electrode structure and being disposed on the mounting surface of the wafer carrier;   wherein the first single electrode structure generates a first homopolar electric field on the polishing pad.   
     
     
         17 . The chemical mechanical polishing apparatus according to  claim 16 , further including an electric field enhancement structure being disposed under the electrode film and having a plurality of conductors that are adjacent to each other.