Substrate for semiconductor light emitting device and semiconductor light emitting device, and manufacturing methods thereof

Abstract

A method of manufacturing a semiconductor light emitting device, the method including arranging multiple particles M in a monolayer on a substrate S, dry etching the multiple particles M arranged to provide a void between the particles M in a condition by which the particles M are etched while the substrate S is not substantially etched; and dry etching the substrate S by using the multiple particles M 1 after the particle etching as an etching mask, thereby forming an uneven structure on one surface X the substrate S.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor light emitting device substrate, the method comprising:
 arranging a plurality of particles in a monolayer on an upper surface of a substrate to form a monolayer particle film;   dry etching said plurality of particles arranged to provide a void between the particles in a condition in which said particles are etched while said substrate is not substantially etched; and   etching said upper surface using said monolayer particle film as a mask, wherein in said substrate etching,   a step-like structure is formed in a region that is exposed in the upper surface of said substrate after said particle etching.   
     
     
         2 . The method of manufacturing a semiconductor light emitting device substrate according to  claim 1 , wherein in said substrate etching, of the plurality of particles, the larger a void between two particles, the smaller said step-like structure. 
     
     
         3 . The method of manufacturing a semiconductor light emitting device substrate according to  claim 2 , wherein in said particle arranging, said plurality of particles are arranged by a Langmuir-Blodgett (LB) method. 
     
     
         4 . A method of manufacturing a semiconductor light emitting device, the method comprising:
 forming a semiconductor light emitting device substrate by the method according to  claim 1 ; and   forming a light emitting structure including a semiconductor layer on said upper surface where said step-like structure is formed in said semiconductor light emitting device substrate.   
     
     
         5 . A method of manufacturing a semiconductor light emitting device, the method comprising:
 obtaining a light emitting device substrate by the manufacturing method according to  claim 1 ; and   laminating a semiconductor functional layer including at least a light emitting layer on a surface of the obtained light emitting device substrate where an uneven structure is formed.