Semiconductor Device Having First and Second Circuits Integrated in a Semiconductor Body

Abstract

A semiconductor device includes at least one wiring layer disposed on a semiconductor body, a field effect transistor integrated in the semiconductor body, the field effect transistor having a plurality of gate electrodes residing in corresponding gate trenches formed in the semiconductor body, a first circuit integrated in the semiconductor body adjacent to the field effect transistor, and a second circuit integrated in the semiconductor body and remote from the first circuit. The semiconductor device further includes a first additional trench formed in the semiconductor body and at least one conductive pad formed in the at least one wiring layer. The first additional trench includes at least one connecting line which electrically connects the first circuit and the second circuit. The at least one conductive pad is arranged to at least partially cover the first additional trench to form a shielding of the at least one connecting line.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor body;   at least one wiring layer disposed on the semiconductor body;   a field effect transistor integrated in the semiconductor body, the field effect transistor having a plurality of gate electrodes residing in corresponding gate trenches formed in the semiconductor body;   a first circuit integrated in the semiconductor body adjacent to the field effect transistor;   a second circuit integrated in the semiconductor body and remote from the first circuit;   a first additional trench formed in the semiconductor body, the first additional trench including at least one connecting line which electrically connects the first circuit and the second circuit; and   at least one conductive pad formed in the at least one wiring layer, the at least one conductive pad being arranged to at least partially cover the first additional trench to form a shielding of the at least one connecting line.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first circuit is a two-terminal circuit. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the first circuit includes a sensor. 
     
     
         4 . The semiconductor device of  claim 3 , wherein the second circuit is configured to process a sensor signal tapped at the sensor. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the second circuit is configured to process a signal tapped at the first circuit.