Semiconductor Devices with On-Chip Antennas and Manufacturing Thereof

Abstract

A semiconductor device includes a semiconductor die having an active main surface and an opposite main surface opposite the active main surface. The semiconductor device further includes an antenna arranged on the active main surface of the semiconductor die and a recess arranged on the opposite main surface of the semiconductor die. The recess is arranged over the antenna.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor die comprising an active main surface and an opposite main surface opposite the active main surface;   an antenna arranged on the active main surface of the semiconductor die; and   a recess arranged on the opposite main surface of the semiconductor die, wherein the recess is arranged over the antenna.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the recess is arranged in a bulk semiconductor material of the semiconductor die. 
     
     
         3 . The semiconductor device of  claim 1 , wherein a distance between a bottom of the recess and the antenna is smaller than about 10 micrometer. 
     
     
         4 . The semiconductor device of  claim 1 , wherein an outline of the antenna is arranged in an outline of the semiconductor die when viewed in a direction perpendicular to the active main surface. 
     
     
         5 . The semiconductor device of  claim 1 , wherein an outline of the recess overlaps with an outline of the antenna when viewed in a direction perpendicular to the active main surface. 
     
     
         6 . The semiconductor device of  claim 1 , wherein a cross section of the recess increases in a direction from a bottom of the recess to the opposite main surface of the semiconductor die. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the recess is filled with a material having a dielectric constant smaller than a dielectric constant of a semiconductor material of the semiconductor die. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the recess is filled with at least one of an epoxy, an imide, a thermoplastic polymer material, a duroplastic polymer material, a polymer blend, a thermosetting material, a mold compound, a glob-top material, and a laminate material. 
     
     
         9 . The semiconductor device of  claim 1 , wherein a length of the antenna is smaller than about 1 millimeter. 
     
     
         10 . A semiconductor device, comprising:
 a semiconductor die comprising an active main surface and an opposite main surface opposite the active main surface; and   an antenna arranged on the active main surface of the semiconductor die,   wherein the opposite main surface of the semiconductor die comprises an epitaxial layer, wherein the epitaxial layer is exposed from semiconductor material and arranged over the antenna.   
     
     
         11 . The semiconductor device of  claim 10 , wherein the opposite main surface of the semiconductor die comprises a recess, wherein a bottom of the recess comprises the exposed epitaxial layer. 
     
     
         12 . The semiconductor device of  claim 10 , wherein the exposed epitaxial layer comprises the entire opposite main surface of the semiconductor die. 
     
     
         13 . The semiconductor device of  claim 10 , further comprising:
 a redistribution layer electrically coupled to an external contact element of the semiconductor device, wherein the antenna is formed in the redistribution layer.   
     
     
         14 . The semiconductor device of  claim 10 , further comprising:
 a metallization layer interconnecting active structures in the semiconductor die, wherein the antenna is formed in the metallization layer.   
     
     
         15 . The semiconductor device of  claim 10 , further comprising:
 an encapsulation material arranged over the exposed epitaxial layer.   
     
     
         16 . A method, comprising:
 providing a semiconductor die comprising an active main surface and an opposite main surface opposite the active main surface;   forming an antenna on the active main surface of the semiconductor die; and   removing semiconductor material from the opposite main surface of the semiconductor die in an area over the antenna.   
     
     
         17 . The method of  claim 16 , wherein the semiconductor material is removed over the entire opposite main surface of the semiconductor die. 
     
     
         18 . The method of  claim 16 , wherein removing the semiconductor material comprises forming a recess in the opposite main surface of the semiconductor die, wherein the recess is arranged over the antenna. 
     
     
         19 . The method of  claim 16 , wherein the antenna is formed in at least one of a redistribution layer electrically coupled to an external contact element of the semiconductor device and a metallization layer interconnecting active structures in the semiconductor die. 
     
     
         20 . The method of  claim 16 , wherein removing the semiconductor material comprises etching the semiconductor material until an epitaxial layer of the semiconductor die is exposed.