Indium oxide nanowire having copper-based dopants, method of forming the same and gas sensor having the same, and method of forming nanowires having metal phthalocyanine, nanowire arrangement and gas sensor having the same

Abstract

According to embodiments of the present invention, a method of forming an indium oxide nanowire including copper-based dopants is provided. The method includes providing an indium-based precursor material and a copper-based dopant precursor material, and performing a thermal evaporation process to vapourise the indium-based precursor material and the copper-based dopant precursor material to form an indium oxide nanowire comprising copper-based dopants on a substrate. According to further embodiments of the present invention, an indium oxide nanowire including copper-based dopants and a gas sensor are also provided. According to further embodiments of the present invention, a method of forming a plurality of nanowires including metal phthalocyanine, a nanowire arrangement and a gas sensor are also provided.

1 . A method of forming an indium oxide nanowire comprising copper-based dopants, the method comprising:
 providing an indium-based precursor material and a copper-based dopant precursor material; and   performing a thermal evaporation process to vapourise the indium-based precursor material and the copper-based dopant precursor material to form an indium oxide nanowire comprising copper-based dopants on a substrate.   
     
     
         2 . The method as claimed in  claim 1 , wherein the indium-based precursor material and the copper-based dopant precursor material are provided at a molar ratio between 3:1 and 20:1. 
     
     
         3 . The method as claimed in  claim 1 , wherein the thermal evaporation process is performed at a temperature between 700° C. and 1000° C. 
     
     
         4 . The method as claimed in  claim 1 , wherein the thermal evaporation process is performed for a duration of between 10 minutes and 300 minutes. 
     
     
         5 . The method as claimed in  claim 1 , further comprising maintaining the substrate at a temperature between 400° C. and 500° C. during the thermal evaporation process. 
     
     
         6 . The method as claimed in  claim 1 , wherein the thermal evaporation process is performed in an at least substantially vacuum environment. 
     
     
         7 . (canceled) 
     
     
         8 . The method as claimed in  claim 1 , further comprising mixing the indium-based precursor material with the copper-based dopant precursor material. 
     
     
         9 . (canceled) 
     
     
         10 . The method as claimed in  claim 1 , further comprising introducing an inert gas during the thermal evaporation process. 
     
     
         11 . (canceled) 
     
     
         12 . The method as claimed in  claim 1 , wherein the indium-based precursor material comprises at least one of indium oxide, indium trichloride, indium nitrate, indium acetate, indium sulfide, indium sulfate or indium hydroxide. 
     
     
         13 . (canceled) 
     
     
         14 . The method as claimed in  claim 1 , wherein the copper-based dopant precursor material comprises at least one of copper oxide, cuprous oxide, cupric oxide, cupric chloride, copper oxychloride, cuprous chloride, cupric nitrate, copper nahpthenate, copper acetate or copper sulphate. 
     
     
         15 - 16 . (canceled) 
     
     
         17 . An indium oxide nanowire comprising copper-based dopants. 
     
     
         18 . The indium oxide nanowire as claimed in  claim 17 , wherein the copper-based dopants are copper dopant atoms. 
     
     
         19 . The indium oxide nanowire as claimed in  claim 17 , wherein a diameter of the indium oxide nanowire is between 50 nm and 300 nm. 
     
     
         20 . The indium oxide nanowire as claimed in  claim 17 , wherein a length of the indium oxide nanowire is between 0.5 μm and 10 μm. 
     
     
         21 . A gas sensor comprising:
 at least one indium oxide nanowire comprising copper-based dopants; and   at least one electrode electrically coupled to the at least one indium oxide nanowire.   
     
     
         22 . The gas sensor as claimed in  claim 21 , further comprising a substrate, wherein the at least one indium oxide nanowire is arranged on the substrate. 
     
     
         23 . The gas sensor as claimed in  claim 21 , wherein the gas sensor comprises a single indium oxide nanowire comprising the copper-based dopants. 
     
     
         24 . The gas sensor as claimed in  claim 21 , wherein the gas sensor comprises a plurality of indium oxide nanowires, each indium oxide nanowire of the plurality of indium oxide nanowires comprising the copper-based dopants. 
     
     
         25 - 28 . (canceled) 
     
     
         29 . The gas sensor as claimed in  claim 21 , wherein the at least one electrode comprises a metal. 
     
     
         30 - 34 . (canceled) 
     
     
         35 . The gas sensor as claimed in  claim 21 , wherein the gas sensor is a card-sized gas sensor. 
     
     
         36 - 86 . (canceled)