Substrates for polycrystalline diamond cutters with unique properties

Abstract

A superabrasive compact and a method of making the superabrasive compact are disclosed. A superabrasive compact may include a diamond table and a substrate. The diamond table may be attached to the substrate. The substrate may have a metric of being defined as a ratio of carbon content over tungsten carbide content, wherein the metric ranges from about 6.13% to about 7.5%.

1 . A superabrasive compact, comprising:
 a polycrystalline diamond table; and   a substrate attached to the polycrystalline diamond table, wherein the substrate comprises hard metal carbides and a binder having carbon at least partially dissolved therein, wherein the substrate has a metric that is defined as a ratio of carbon content over hard metal carbide content evaluated by weight, wherein the metric ranges from about 6.13% to about 7.5%.   
     
     
         2 . The superabrasive compact of  claim 1 , wherein the substrate comprises at least one of cemented tungsten carbide or nickel based tungsten carbide. 
     
     
         3 . The superabrasive compact of  claim 1 , wherein the substrate contains at least one of tungsten carbide, chromium carbide, or cobalt. 
     
     
         4 . (canceled) 
     
     
         5 . The superabrasive compact of  claim 1 , wherein the binder in the substrate comprises cobalt. 
     
     
         6 . The superabrasive compact of  claim 5 , wherein the metric ranges from about 6.33% to about 7.3%. 
     
     
         7 . The superabrasive compact of  claim 1 , wherein the binder comprises a supersaturated solid solution of carbon in the binder. 
     
     
         8 . The superabrasive compact of  claim 1 , wherein the binder contains a concentration of carbon that exceeds a saturation limit of carbon in the binder. 
     
     
         9 . The superabrasive compact of  claim 8 , wherein the substrate exhibits pore sizes of less than 10 microns in diameter. 
     
     
         10 . (canceled) 
     
     
         11 . (canceled) 
     
     
         12 . (canceled) 
     
     
         13 . (canceled) 
     
     
         14 . (canceled) 
     
     
         15 . (canceled) 
     
     
         16 . (canceled) 
     
     
         17 . (canceled) 
     
     
         18 . (canceled) 
     
     
         19 . (canceled) 
     
     
         20 . (canceled) 
     
     
         21 . (canceled) 
     
     
         22 . (canceled) 
     
     
         23 . (canceled) 
     
     
         24 . A method of making a superabrasive compact, comprising:
 positioning a plurality of superabrasive particles proximate to a substrate, wherein the substrate has hard metal carbides and a binder having a species at least partially dissolved therein, wherein the substrate has a metric of being defined as a ratio of species content over hard metal carbide content as evaluated by weight, wherein the metric ranges from about 6.13% to about 7.5%; and   subjecting the substrate and the plurality of superabrasive particles to a high pressure high temperature process suitable for producing the superabrasive compact.   
     
     
         25 . The method of  claim 24 , wherein the substrate comprises at least one of cemented tungsten carbide or nickel based tungsten carbide. 
     
     
         26 . The method of  claim 24 , wherein the superabrasive particles are selected from a group consisting of cubic boron nitride, diamond, diamond composite materials, and diamond like materials. 
     
     
         27 . The method of  claim 25 , wherein the cemented tungsten contains a species before subjecting the substrate to elevated pressure and temperature of the high pressure high temperature process. 
     
     
         28 . The method of  claim 27 , further comprising dissolving the species into a binder in the substrate during elevated pressure and temperature of the high pressure high temperature process. 
     
     
         29 . The method of  claim 24 , wherein the dissolved species remain in solid solution with the binder after the substrate is cooled down to room temperature and ambient pressure from elevated temperature and pressure of the high pressure high temperature process. 
     
     
         30 . The method of  claim 24 , wherein a temperature and a pressure of the high pressure high temperature process are at least about 600° C. and at least about 30 kbar respectively. 
     
     
         31 . The method of  claim 24 , wherein the plurality of superabrasive particles are a partially leached polycrystalline diamond table. 
     
     
         32 . The method of  claim 31 , further comprising bonding the substrate to the at least partially leached polycrystalline diamond table. 
     
     
         33 . The method of  claim 24 , further comprising sweeping the binder from the substrate into the plurality of superabrasive particles. 
     
     
         34 . The method of  claim 33 , wherein the binder from the substrate comprises cobalt. 
     
     
         35 . The method of  claim 24 , wherein the species is selected from the group consisting of elements, compounds, and eutectic alloy. 
     
     
         36 . The method of  claim 35 , wherein the elements are selected from the group consisting of carbon, boron, beryllium, aluminum, manganese, sulfur, and phosphorus. 
     
     
         37 . The method of  claim 35 , wherein the compounds comprise at least one of beryllium compound, boron compound, nitride compound, aluminum compound, silicon compound, or phosphorus compound. 
     
     
         38 . The method of  claim 35 , wherein the eutectic alloy comprises at least one of beryllium alloy, boron alloy, carbide alloy, aluminum alloy, silicon alloy, sulfur alloy or phosphorus alloy. 
     
     
         39 . The method of  claim 35 , wherein the elements comprise free carbons. 
     
     
         40 . The method of  claim 24 , wherein, after the high pressure high temperature process, the binder comprises a supersaturated solid solution of carbon in the binder. 
     
     
         41 . The method of  claim 24 , wherein, after the high pressure high temperature process, the binder contains a concentration of carbon exceeds a saturation limit of carbon in the binder. 
     
     
         42 . The method of  claim 41 , wherein the substrate exhibits pore sizes of less than 10 microns in diameter. 
     
     
         43 . A compact, comprising:
 a plurality of hard metal carbide particles;   a binder dispersed among the plurality of hard metal carbide particles, wherein the binder comprises carbon that is dissolved in the binder, wherein the compact has a metric of being defined as a ratio of carbon content over hard metal carbide content, wherein the metric ranges from about 6.13% to about 7.5%.   
     
     
         44 . (canceled) 
     
     
         45 . The compact of  claim 43 , wherein the binder in the substrate comprises cobalt. 
     
     
         46 . The compact of  claim 43 , wherein the metric ranges from about 6.33% to about 7.3%. 
     
     
         47 . The compact of  claim 46 , wherein the compact has free carbon. 
     
     
         48 . The compact of  claim 43 , wherein the binder comprises a supersaturated solid solution of carbon in the binder. 
     
     
         49 . The compact of  claim 43 , wherein, after the high pressure high temperature process, the binder contains a concentration of carbon exceeds a saturation limit of carbon in the binder. 
     
     
         50 . The compact of  claim 49 , wherein the substrate exhibits pore sizes of less than 10 microns in diameter.