US2017288145A1PendingUtilityA1
Method of forming a graphene structure
Est. expiryDec 31, 2034(~8.4 yrs left)· nominal 20-yr term from priority
H10P 14/3451H10P 14/3406H10P 14/2925H10P 14/2904H10P 14/2902H10P 14/20C01B 31/0226H01L 51/0002H01L 51/0026H01L 51/003H01L 51/057C01B 31/0461H01L 51/0048H10D 62/8303H10D 62/882H10D 62/123H10D 62/122H10D 30/472H10D 30/43H10D 30/014H10D 30/01B82Y 30/00C01B 32/184Y10S977/932Y10S977/742Y10S977/842B82Y 40/00C01B 32/188C01B 32/16H10K 85/221H10K 10/491H10K 10/484H10K 71/80H10K 71/10H10K 71/40
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Claims
Abstract
In various embodiments, a method of forming a graphene structure is provided. The method may include forming a body including at least one protrusion, and forming a graphene layer at an outer peripheral surface of the at least one protrusion.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of forming a graphene structure, comprising:
forming at least one opening in a body; and forming a graphene layer at an inner peripheral surface of the at least one opening.
2 . The method of claim 1 , further comprising at least partially removing the body from an outer peripheral surface of the graphene layer.
3 . The method of claim 1 ,
wherein the body comprises silicon carbide.
4 . The method of claim 3 , wherein forming the graphene layer at the inner peripheral surface of the at least one opening comprises annealing the body so that the graphene layer forms at an inner peripheral surface of the at least one opening.
5 . The method of claim 4 , wherein process parameters of the annealing comprise at least one of an annealing temperature, an annealing duration, an atmospheric pressure, and constituents of the atmosphere.
6 . The method of claim 4 , wherein an annealing temperature is in a range from about 1150° C. to about 1800° C.
7 . The method of claim 4 , wherein an annealing duration is in a range from about 5 minutes to about 60 minutes.
8 . The method of claim 1 , wherein the graphene layer is a closed surface.
9 . The method of claim 1 , wherein the graphene layer is a carbon nanotube.
10 . The method of claim 9 , wherein the carbon nanotube is unfilled.
11 . The method of claim 2 , wherein at least partially removing the body from an outer peripheral surface of the graphene layer comprises etching the body.
12 . The method of claim 1 , comprising removing the graphene layer from the body.
13 . A method of forming a graphene structure, comprising:
forming at least one cylindrical opening in a body, wherein a diameter of the opening is chosen to fulfill a relation d=78.3□((n+m)2−n×m)0.5 pm, wherein n and m are integer values, at least one of n and m being greater than 0; and forming a graphene layer at an inner peripheral surface of the at least one opening.
14 . The method of claim 13 , further comprising at least partially removing the body from an outer peripheral surface of the graphene layer.
15 . The method of claim 14 , wherein at least partially removing the body from an outer peripheral surface of the graphene layer comprises etching the body.
16 . The method of claim 13 ,
wherein the body comprises silicon carbide.
17 . The method of claim 16 , wherein forming the graphene layer at the inner peripheral surface of the at least one opening comprises annealing the body so that the graphene layer forms at an inner peripheral surface of the at least one opening.
18 . The method of claim 13 , wherein the graphene layer is a carbon nanotube.Join the waitlist — get patent alerts
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