Semiconductor device and semiconductor module

Abstract

The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a low voltage element;   a high voltage element;   a transformer element including a low voltage coil electrically connected to the low voltage element and a high voltage coil electrically connected to the high voltage element, the transformer element capable of transferring a signal from the low voltage element to the high voltage element;   a resin package covering the low voltage element, the high voltage element and the transformer element; and   a plurality of terminals electrically connected to the low voltage element and the high voltage element, and exposed from the resin package.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 the transformer element is smaller than the low voltage element and the high voltage element.   
     
     
         3 . The semiconductor device according to  claim 1 , wherein
 the transformer element is disposed between the low voltage element and the high voltage element.   
     
     
         4 . The semiconductor device according to  claim 1 , wherein
 the low voltage element includes a control circuit capable of controlling driving of a switching element disposed outside the semiconductor device, and   the high voltage element controls switching operation of the switching element based upon a signal transferred from the control circuit via the transformer element.   
     
     
         5 . The semiconductor device according to  claim 1 , wherein
 the transformer element is formed in a rectangular shape,   the semiconductor device includes a plurality of low voltage pad electrically connected the low voltage element and a plurality of high voltage pad electrically connected the high voltage element,   the plurality of low voltage pad are arranged along one long side of the transformer element, and   the plurality of high voltage pad are arranged along the other long side of the transformer element.