Substrate Processing Apparatus

Abstract

A substrate processing apparatus includes: a process chamber where a substrate is processed; a substrate support, disposed in the process chamber, where the substrate is placed; a transfer chamber disposed under the process chamber; a partition dividing the process and transfer chambers; a first heating unit disposed in the substrate support to heat the substrate and the process chamber; a second heating unit disposed in the transfer chamber to heat the transfer chamber; a process gas supply unit to supply a process gas into the process chamber; a first cleaning gas supply unit to supply a cleaning gas into the process chamber; a second cleaning gas supply unit to supply the cleaning gas into the transfer chamber; and a control unit to control the first heating unit, the second heating unit, the process gas supply unit, the first cleaning gas supply unit and the second cleaning gas supply unit.

1 . A substrate processing apparatus comprising:
 a process chamber where a substrate is processed;   a substrate support where the substrate is placed, the substrate support being disposed in the process chamber;   a transfer chamber disposed under the process chamber;   a partition dividing the process chamber and the transfer chamber;   a first heating unit disposed in the substrate support and configured to heat the substrate and the process chamber;   a second heating unit disposed at a side wall of the transfer chamber below the partition and configured to heat the side wall of the transfer chamber at a temperature different from those of the substrate and the process chamber;   a process gas supply unit configured to supply a process gas into the process chamber;   a first cleaning gas supply unit configured to supply a first cleaning gas into the process chamber;   a second cleaning gas supply unit configured to supply the first cleaning gas into the transfer chamber; and   a control unit configured to control the first heating unit, the second heating unit, the process gas supply unit, the first cleaning gas supply unit and the second cleaning gas supply unit.   
     
     
         2 . The substrate processing apparatus of  claim 1 , further comprising:
 a side temperature adjusting unit disposed at the side wall of the transfer chamber below the partition and configured to heat or cool the side wall of the transfer chamber; and   a bottom temperature adjusting unit disposed below the side temperature adjusting unit at a bottom portion of the transfer chamber and configured to heat or cool the bottom portion of the transfer chamber.   
     
     
         3 . The substrate processing apparatus of  claim 1 , wherein the control unit is further configured to control a temperature of the first heating unit such that the process gas reacts with the substrate, and to control a temperature of the second heating unit such that a temperature of the side wall of the transfer chamber is: equal to or higher than a temperature whereat the process gas is not adsorbed onto the side wall of the transfer chamber; and equal to or lower than a temperature whereat the process gas is not decomposed. 
     
     
         4 . The substrate processing apparatus of  claim 2 , wherein the control unit is further configured to control a temperature of the first heating unit such that the process gas reacts with the substrate, and to control a temperature of the second heating unit such that the process gas is not adsorbed onto the side wall of the transfer chamber and is not decomposed. 
     
     
         5 . The substrate processing apparatus of  claim 2 , further comprising a medium supply unit configured to supply a thermal medium to the side temperature adjusting unit and the bottom temperature adjusting unit,
 wherein the control unit is further configured to control the medium supply unit such that a temperature of the side temperature adjusting unit is higher than that of the bottom temperature adjusting unit.   
     
     
         6 . The substrate processing apparatus of  claim 1 , further comprising a first thermal insulating unit disposed within the side wall of the transfer chamber under the partition. 
     
     
         7 . The substrate processing apparatus of  claim 2 , further comprising a first thermal insulating unit disposed within the side wall of the transfer chamber under the partition. 
     
     
         8 . The substrate processing apparatus of  claim 4 , further comprising a first thermal insulating unit disposed within the side wall of the transfer chamber under the partition. 
     
     
         9 . The substrate processing apparatus of  claim 1 , further comprising a second thermal insulating unit disposed between the substrate support and a shaft supporting the substrate support, the second thermal insulating unit having a diameter smaller than that of the shaft. 
     
     
         10 . The substrate processing apparatus of  claim 2 , further comprising a second thermal insulating unit disposed between the substrate support and a shaft supporting the substrate support, the second thermal insulating unit having a diameter smaller than that of the shaft. 
     
     
         11 . The substrate processing apparatus of  claim 4 , further comprising a second thermal insulating unit disposed between the substrate support and a shaft supporting the substrate support, the second thermal insulating unit having a diameter smaller than that of the shaft. 
     
     
         12 . The substrate processing apparatus of  claim 8 , further comprising a second thermal insulating unit disposed between the substrate support and a shaft supporting the substrate support, the second thermal insulating unit having a diameter smaller than that of the shaft. 
     
     
         13 . The substrate processing apparatus of  claim 1 , wherein the control unit is further configured to control the first heating unit, the second heating unit, the process gas supply unit, the first cleaning gas supply unit and the second cleaning gas supply unit such that a temperature of the process chamber is maintained to be higher than that of the transfer chamber while the substrate is processed by supplying the process gas into the process chamber and that the temperature of the transfer chamber is maintained to be higher than that of in the process chamber while the first cleaning gas is supplied into the process chamber and the transfer chamber. 
     
     
         14 . The substrate processing apparatus of  claim 2 , wherein the control unit is further configured to control the first heating unit, the second heating unit, the process gas supply unit, the first cleaning gas supply unit and the second cleaning gas supply unit such that a temperature of the process chamber is maintained to be higher than that of the transfer chamber while the substrate is processed by supplying the process gas into the process chamber and that the temperature of the transfer chamber is maintained to be higher than that of the process chamber while the first cleaning gas is supplied into the process chamber and the transfer chamber. 
     
     
         15 . The substrate processing apparatus of  claim 4 , wherein the control unit is further configured to control the first heating unit, the second heating unit, the process gas supply unit, the first cleaning gas supply unit and the second cleaning gas supply unit such that a temperature of the process chamber is maintained to be higher than that of the transfer chamber while the substrate is processed by supplying the process gas into the process chamber and that the temperature of the transfer chamber is maintained to be higher than that of the process chamber while the first cleaning gas is supplied into the process chamber and the transfer chamber. 
     
     
         16 . (canceled) 
     
     
         17 . (canceled) 
     
     
         18 . The substrate processing apparatus of  claim 1 , wherein the control unit is further configured to control a temperature of the second heating unit such that the cleaning gas is adsorbed onto the transfer chamber when the first cleaning gas is supplied into the process chamber and the transfer chamber. 
     
     
         19 . The substrate processing apparatus of  claim 13 , wherein the control unit is further configured to control a temperature of the second heating unit such that the cleaning gas is adsorbed onto the transfer chamber when the first cleaning gas is supplied into the process chamber and the transfer chamber. 
     
     
         20 . The substrate processing apparatus of  claim 2 , further comprising a thermal medium supply unit configured to supply a thermal medium to each of the side temperature adjusting unit and the bottom temperature adjusting unit. 
     
     
         21 . The substrate processing apparatus of  claim 2 , wherein the second heating unit is disposed between the side temperature adjusting unit and a surface of the side wall of the transfer chamber. 
     
     
         22 . The substrate processing apparatus of  claim 2 , wherein the side temperature adjusting unit comprises a pipe having a spiral shape to surround the transfer chamber.