US2017279061A1PendingUtilityA1

Light emitting element and light emitting device

Assignee: SEMICONDUCTOR ENERGY LABPriority: Mar 17, 2003Filed: Jun 6, 2017Published: Sep 28, 2017
Est. expiryMar 17, 2023(expired)· nominal 20-yr term from priority
Inventors:Hiroko Yamazaki
B32B 37/0053B32B 38/0036B32B 17/06H01L 51/5036H01L 51/0085H01L 51/5016H01L 51/0077H01L 51/005H01L 51/0059H01L 51/0084H01L 51/0081H01L 51/0078H01L 51/0036H01L 51/0037H01L 51/0062H10K 2101/10H10K 85/324H10K 85/30H10K 85/342H10K 85/1135H10K 50/11H10K 85/341H10K 85/649H10K 85/311H10K 85/60H10K 85/631H10K 50/125H10K 85/113
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Claims

Abstract

A high efficient white emission light emitting element having peak intensity in each wavelength region of red, green, and blue is provided. Specifically, a white emission light emitting element having an emission spectrum that is independent of current density is provided. A first light emitting layer 312 exhibiting blue emission and a second light emitting layer 313 containing a phosphorescent material that generates simultaneously phosphorescent emission and excimer emission are combined. In order to derive excimer emission from the phosphorescent material, it is effective to disperse a phosphorescent material 323 having a high planarity structure such as to platinum complex at a high concentration of at least 10 wt % to a host material 322. Further, the first light emitting layer 312 is provided to be in contact with the second light emitting layer 313 at the side of an anode. Ionization potential of the second light emitting layer 313 is preferably larger by 0.4 eV than that of the first light emitting layer 312.

Claims

exact text as granted — not AI-modified
1 . (canceled) 
     
     
         2 . A light emitting device comprising:
 an anode and a cathode;   a first light emitting layer between the anode and the cathode, the first light emitting layer comprising a first host material and a blue-emissive guest material; and   a second light emitting layer between the first light emitting layer and the cathode, the second light emitting layer being in contact with the first light emitting layer and containing a host material and a phosphorescent material,   wherein the blue-emissive guest material is dispersed in the first host material, and   wherein ionization potential of the second light emitting layer is larger by 0.4 eV than that of the blue-emissive guest material.   
     
     
         3 . The light emitting device according to  claim 2 , wherein the first light emitting layer exhibits blue emission. 
     
     
         4 . The light emitting device according to  claim 2 , wherein the phosphorescent material is an organic metal complex with platinum as a central metal. 
     
     
         5 . The light emitting device according to  claim 4 , wherein the organic metal complex is selected from 
       
         
           
           
               
               
           
         
       
     
     
         6 . The light emitting device according to  claim 2 , wherein the first light emitting layer has an emission peak in a wavelength region from 400 nm to 500 nm. 
     
     
         7 . The light emitting device according to  claim 6 , wherein the phosphorescent material has at least two emission peaks at a wavelength region from 500 nm to 700 nm, and at least one of the emission peaks corresponds to the excimer emission. 
     
     
         8 . The light emitting device according to  claim 2 , wherein the phosphorescent material is dispersed in the host material at a concentration of at least 15 wt %. 
     
     
         9 . The light emitting device according to  claim 2 , wherein the light emitting device emits white light. 
     
     
         10 . The light emitting device according to  claim 2 , further comprising a hole injecting layer between the anode and the first light emitting layer. 
     
     
         11 . The light emitting device according to  claim 10 , wherein the hole injecting layer comprises a metal oxide. 
     
     
         12 . An electric appliance comprising the light emitting device according to  claim 2 . 
     
     
         13 . A semiconductor device comprising the light emitting device according to  claim 2 . 
     
     
         14 . A light emitting device comprising:
 a first electrode;   a first light emitting layer over the first electrode, the first light emitting layer comprising a first host material and a blue-emissive guest material;   a second light emitting layer over and in contact with the first light emitting layer, the second light emitting layer containing a host material and a phosphorescent material, and   a second electrode over the second light emitting layer,   wherein the blue-emissive guest material is dispersed in the first host material, and   wherein ionization potential of the second light emitting layer is larger by 0.4 eV than that of the blue-emissive guest material.   
     
     
         15 . The light emitting device according to  claim 14 , wherein the first light emitting layer exhibits blue emission. 
     
     
         16 . The light emitting device according to  claim 14 , wherein the phosphorescent material is an organic metal complex with platinum as a central metal. 
     
     
         17 . The light emitting device according to  claim 16 , wherein the organic metal complex is selected from 
       
         
           
           
               
               
           
         
       
     
     
         18 . The light emitting device according to  claim 14 , wherein the first light emitting layer has an emission peak in a wavelength region from 400 nm to 500 nm. 
     
     
         19 . The light emitting device according to  claim 18 , wherein the phosphorescent material has at least two emission peaks at a wavelength region from 500 nm to 700 nm, and at least one of the emission peaks corresponds to the excimer emission. 
     
     
         20 . The light emitting device according to  claim 14 , wherein the phosphorescent material is dispersed in the host material at a concentration of at least 15 wt %. 
     
     
         21 . The light emitting device according to  claim 14 , wherein the light emitting device emits white light. 
     
     
         22 . The light emitting device according to  claim 14 , further comprising a hole injecting layer over and in contact with the first electrode. 
     
     
         23 . The light emitting device according to  claim 22 , wherein the hole injecting layer comprises a metal oxide. 
     
     
         24 . An electric appliance comprising the light emitting device according to  claim 14 . 
     
     
         25 . A semiconductor device comprising the light emitting device according to  claim 14 .

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