Light-emitting device and manufacturing method thereof

Abstract

The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface of the permanent substrate; wherein the third block of semiconductor stack is separated from the first substrate, and one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of the semiconductor stack comprise different optical characteristic value or an electrical characteristic value.

What is claimed is: 
     
         1 . A method for manufacturing a light-emitting device, comprising:
 providing a first substrate;   providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack;   performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate;   providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and   bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface of the permanent substrate;   wherein the third block of semiconductor stack is separated from the first substrate, and one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of the semiconductor stack comprise different optical characteristic value or an electrical characteristic value.   
     
     
         2 . The method for manufacturing a light-emitting device of  claim 1 , wherein a difference in a dominant wavelength between one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of semiconductor stack is greater than or equal to 1 nm. 
     
     
         3 . The method for manufacturing a light-emitting device of  claim 1 , wherein a difference in a forward voltage between one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of semiconductor stack is greater than or equal to 2%. 
     
     
         4 . The method for manufacturing a light-emitting device of  claim 1 , wherein a difference in a luminous intensity between one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of semiconductor stack is greater than or equal to 3%. 
     
     
         5 . The method for manufacturing a light-emitting device of  claim 1 , further comprising performing a first separating step, which comprises:
 forming a first sacrificial layer on the third block of semiconductor stack;   providing a temporary substrate;   bonding the temporary substrate and the first sacrificial layer; and   separating the third block of semiconductor stack from the first substrate.   
     
     
         6 . The method for manufacturing a light-emitting device of  claim 1 , further comprising performing a first separating step, which comprises:
 bonding the first substrate and the permanent substrate with alignment so that the third block of semiconductor stack are bonded to the first surface; and   separating the third block of semiconductor stack from the first substrate.   
     
     
         7 . The method for manufacturing a light-emitting device of  claim 1 , further comprising bonding the second block of semiconductor stack to the permanent substrate, the step comprising:
 bonding the first substrate and the permanent substrate with alignment so that the second block of semiconductor stack are bonded to the second surface; and   separating the second block of semiconductor stack from the first substrate.   
     
     
         8 . The method for manufacturing a light-emitting device of  claim 1 , wherein the separating step comprises:
 forming a sacrificial layer on the first block of semiconductor stack;   providing a temporary substrate;   bonding the temporary substrate and the sacrificial layer; and   separating the first block of semiconductor stack from the first substrate.   
     
     
         9 . The method for manufacturing a light-emitting device of  claim 1 , wherein the second surface and the first surface are non-coplanar. 
     
     
         10 . The method for manufacturing a light-emitting device of  claim 1 , further comprising performing lithography and etching processes to the permanent substrate so that the second surface and the first surface are non-coplanar. 
     
     
         11 . The method for manufacturing a light-emitting device of  claim 1 , wherein the plurality of blocks of semiconductor stack are classified into being in a first region or a second region, and the first region is substantially a circle, and the second region is substantially an annular shape surrounding the first region; wherein the block of semiconductor stack in the first region comprises an optical characteristic value or an electrical characteristic value different from that of the block of semiconductor stack in the second region. 
     
     
         12 . The method for manufacturing a light-emitting device of  claim 11 , wherein one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate is separated from the first region, and the third block of semiconductor stack is separated from the second region. 
     
     
         13 . The method for manufacturing a light-emitting device of  claim 11 , further comprising performing a measuring step to measure the optical characteristic value or the electrical characteristic value of all the blocks of semiconductor stack, and to determine the first region and the second region based on a predetermined differential value for the optical characteristic value or the electrical characteristic value. 
     
     
         14 . The method for manufacturing a light-emitting device of  claim 1 , further comprising forming a metal line between one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of semiconductor stack to from an electrical connection. 
     
     
         15 . The method for manufacturing a light-emitting device of  claim 1 , wherein one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate is electrically connected to the third block of semiconductor stack in series or in parallel. 
     
     
         16 . The method for manufacturing a light-emitting device of  claim 1 , further comprising classifying the blocks of semiconductor stack into a typical bin group, a low bin group, and a high bin group based on the optical characteristic value or the electrical characteristic value of all blocks of semiconductor stack, wherein the optical characteristic value or the electrical characteristic value in the high bin group is greater than that in the typical bin group, and the optical characteristic value or the electrical characteristic value in the typical bin group is greater than that in the low bin group. 
     
     
         17 . The method for manufacturing a light-emitting device of  claim 16 , wherein the third block of semiconductor stack is selected from one of the high bin group and the low bin group, and one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate is selected from one of the high bin group and the low bin group which is different from the third block of the semiconductor stack. 
     
     
         18 . The method for manufacturing a light-emitting device of  claim 1 , wherein the third block of semiconductor stack is bonded to the first surface with a first bonding layer, and one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate is bonded to the second surface with a second bonding layer, and wherein the first bonding layer and the second bonding layer have different thicknesses. 
     
     
         19 . The method for manufacturing a light-emitting device of  claim 1 , wherein a distance between one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of semiconductor stack on the permanent substrate is different from a distance between one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of semiconductor stack on the first substrate. 
     
     
         20 . The method for manufacturing a light-emitting device of  claim 1 , wherein a distance between one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of semiconductor stack on the permanent substrate is smaller than a distance between one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of semiconductor stack on the first substrate.