Resistive change element, non-volatile storage device, and programmable logic device

Abstract

A programmable logic device according to an embodiment includes: a plurality of first and second wiring lines; a plurality of resistive change elements each including a first electrode containing Ni and connected to corresponding one of the first wiring lines, a second electrode containing TiN and connected to corresponding one of the second wiring lines, a resistive change layer containing a hafnium oxide and arranged between the first electrode and the second electrode, and an insulation layer arranged between the resistive change layer and the second electrode, the insulation layer including at least one of an aluminum oxide, an iron oxide, a titanium oxide, a copper oxide, a nickel oxide, a tantalum oxide, a tungsten oxide, a chromium oxide, a rhenium oxide, and a hafnium oxynitride.

1 . A programmable logic device comprising:
 a first wiring;   a second wiring intersecting with the first wiring;   a resistive change element disposed in cross region of the first wiring and the second wiring, the resistive change element including a first electrode containing Ni and connected to corresponding one of the first wiring, a second electrode containing TiN and connected to the second wiring, a resistive change layer containing a hafnium oxide and arranged between the first electrode and the second electrode, and an insulation layer arranged between the resistive change layer and the second electrode, the insulation layer including at least one of an aluminum oxide, an iron oxide, a titanium oxide, a copper oxide, a nickel oxide, a tantalum oxide, a tungsten oxide, a chromium oxide, and a rhenium oxide, and in the resistive change element, a resistive state between the first electrode and the second electrode being changeable from one of a first resistive state and a second resistive state having a resistance value larger than that of the first resistive state to the other;   a first driver connected to the first wiring; and   a second driver connected to the second wiring.   
     
     
         2 . The logic device according to  claim 1 , wherein when the resistive change element is in the first resistive state, a ratio of first current to second current is equal to or higher than 1/10 and equal to or lower than 10, the first current flowing in a case where predetermined voltage is applied to the resistive change element in such a manner that the first current flows from the second electrode to the first electrode, and the second current flowing in a case where voltage, which has an opposite polarity of the predetermined voltage, is applied to the resistive change element in such a manner that the second current flows from the first electrode to the second electrode. 
     
     
         3 . The device according to  claim 1 , wherein the resistive change element is a unipolar-type. 
     
     
         4 . The device according to  claim 1 , wherein the insulation layer includes a material with an electron affinity being in a range higher than 2.65 eV and lower than 4.45 eV. 
     
     
         5 . A non-volatile storage device comprising:
 a first wiring;   a second wiring intersecting with the first wiring;   a resistive change element disposed in cross region of the first wiring and the second wiring, the resistive change element including a first electrode containing Ni and connected to the first wiring, a second electrode containing TiN and connected to the second wiring, a resistive change layer containing a hafnium oxide and arranged between the first electrode and the second electrode, and an insulation layer arranged between the resistive change layer and the second electrode, the insulation layer including at least one of an aluminum oxide, an iron oxide, a titanium oxide, a copper oxide, a nickel oxide, a tantalum oxide, a tungsten oxide, a chromium oxide, and a rhenium oxide, and in the resistive element, a resistive state between the first electrode and the second electrode being changeable from one of a first resistive state and a second resistive state having a resistance value larger than that of the first resistive state to the other;   a first voltage application circuit connected to the first wiring; and   a second voltage application circuit connected to the second wiring.   
     
     
         6 . The device according to  claim 5 , wherein the resistive change element is a unipolar-type. 
     
     
         7 . The device according to  claim 5 , wherein the insulation layer includes a material with an electron affinity being in a range higher than 2.65 eV and lower than 4.45 eV. 
     
     
         8 . A resistive change element comprising:
 a first electrode including Ni;   a second electrode including TiN;   a resistive change layer including a hafnium oxide and arranged between the first electrode and the second electrode; and   an insulation layer arranged between the resistive change layer and the second electrode, the insulation layer including at least one of an aluminum oxide, an iron oxide, a titanium oxide, a copper oxide, a nickel oxide, a tantalum oxide, a tungsten oxide, a chromium oxide, and a rhenium oxide.   
     
     
         9 . The resistive change element according to  claim 8 , wherein the insulation layer includes a material with an electron affinity being in a range higher than 2.65 eV and lower than 4.45 eV.