Substrate support assembly having metal bonded protective layer

Abstract

A method of manufacturing a substrate support assembly comprises bonding a ceramic body to a thermally conductive base. The method further comprises metal bonding a protective layer to the ceramic body, wherein the protective layer is a sintered ceramic article.

What is claimed is: 
     
         1 . A method comprising:
 bonding a lower surface of a ceramic body to a thermally conductive base, the ceramic body having a first ceramic material composition;   coating an upper surface of the ceramic body with a first metal layer;   coating a surface of a plasma resistant protective layer with a second metal layer, the plasma resistant protective layer comprising a sintered ceramic article having a second ceramic material composition that is different from the first ceramic material composition;   positioning the surface of the protective layer against the upper surface of the ceramic body with a reactive foil therebetween, the reactive foil comprising a combination of at least two different metals; and   bonding the upper surface of the ceramic body to the protective layer using a room temperature metal bonding process that comprises igniting the reactive foil to form a metal bond based on melting the first metal layer and the second metal layer.   
     
     
         2 . The method of  claim 1 , wherein the first metal layer and the second metal layer each comprise at least one of tin or indium. 
     
     
         3 . The method of  claim 1 , wherein the reactive foil comprises alternating nanoscale layers of aluminum and nickel. 
     
     
         4 . The method of  claim 1 , wherein coating the upper surface of the ceramic body comprises:
 forming a titanium layer on the upper surface; and   forming the first metal layer on the titanium layer.   
     
     
         5 . The method of  claim 1 , wherein bonding the lower surface of the ceramic body to the thermally conductive base comprises performing an additional metal bonding process. 
     
     
         6 . The method of  claim 1 , wherein the second ceramic material composition comprises at least one of sapphire or a yttrium containing oxide. 
     
     
         7 . The method of  claim 1 , wherein the thermally conductive base is a metal base comprising one or more heating elements. 
     
     
         8 . The method of  claim 1 , further comprising:
 positioning at least one of a gasket or an o-ring at an outer perimeter of the upper surface of the ceramic body prior to positioning the surface of the protective layer on the upper surface of the ceramic body; and   compressing at least one of the gasket or the o-ring.   
     
     
         9 . The method of  claim 1 , further comprising:
 grinding the protective layer from an initial thickness to a final thickness after performing the bonding, the final thickness being approximately 200-500 microns;   forming mesas on an upper surface of the protective layer; and   drilling holes in at least one of the protective layer or the ceramic body.   
     
     
         10 . The method of  claim 1 , further comprising:
 coupling the metal bond to a sealed electrode connection that is to connect the metal bond to a chucking power source to cause the metal bond to function as an electrode for an electrostatic chuck.   
     
     
         11 . The method of  claim 1 , wherein the plasma resistant protective layer is a ceramic compound comprising Y 4 Al 2 O 9  and a solid-solution of Y 2 O 3 —ZrO 2 . 
     
     
         12 . The method of  claim 1 , wherein the ceramic body does not include any electrode. 
     
     
         13 . The method of  claim 1 , wherein a thickness of the metal bond is approximately 5-20 mil. 
     
     
         14 . The method of  claim 1 , wherein the reactive foil comprises alternating nanoscale layers of copper and nickel. 
     
     
         15 . The method of  claim 1 , wherein bonding the lower surface of the ceramic body to the thermally conductive base is performed using a silicone bond. 
     
     
         16 . The method of  claim 1 , wherein the plasma resistant protective layer comprises Y x Al y O z . 
     
     
         17 . A method of manufacturing a substrate support assembly comprising:
 bonding a lower surface of a ceramic body to a thermally conductive base, wherein the ceramic body has a first ceramic material composition; and   bonding an upper surface of the ceramic body to a plasma resistant protective layer by a metal bonding process, wherein the plasma resistant protective layer has a second ceramic material composition that is different from the first ceramic material composition, and wherein bonding the upper surface of the ceramic body to the plasma resistant protective layer comprises:
 coating the upper surface of the ceramic body with a first metal layer; 
 coating a surface of the plasma resistant protective layer with a second metal layer; 
 positioning the surface of the plasma resistant protective layer against the upper surface of the ceramic body with a reactive foil there between, the reactive foil comprising at least two different metals; and 
 igniting the reactive foil to form a metal bond based on melting the first metal layer and the second metal layer, wherein the metal bond functions as an electrode of the substrate support assembly, and wherein the metal bond comprises the first metal layer, the second metal layer and a third metal layer between the first metal layer and the second metal layer, the third metal layer comprising a combination of the at least two different metals; and 
   forming an electrode connection that is to electrically connect the metal bond to at least one of a power source or a radio frequency source, the electrode connection comprising a hole filled with an electrically conductive material.   
     
     
         18 . The method of  claim 17 , further comprising:
 positioning at least one of a gasket or an o-ring at an outer perimeter of the upper surface of the ceramic body prior to positioning the plasma resistant protective layer on the ceramic body; and   compressing at least one of the gasket or the o-ring.   
     
     
         19 . The method of  claim 17 , further comprising:
 grinding the plasma resistant protective layer from an initial thickness to a final thickness of approximately 150-400 microns after performing the bonding;   forming mesas on an upper surface of the plasma resistant protective layer; and   drilling holes in at least one of the plasma resistant protective layer or the ceramic body.   
     
     
         20 . The method of  claim 17 , wherein the electrostatic chuck is capable of temperature changes at a rate of change of +/−2° C./s.