Method for forming base film of graphene, graphene forming method, and apparatus for forming base film of graphene

Abstract

A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

1 - 12 . (canceled) 
     
     
         13 . A method for forming a base film of a graphene, comprising:
 forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas;   heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and   heating the substrate to a temperature at which crystal grains of metal are grown in the metal film,   wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.   
     
     
         14 . The method of  claim 13 , wherein the forming a metal film, the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order. 
     
     
         15 . The method of  claim 14 , wherein a ratio of a flow rate of the ammonia gas to a flow rate of the hydrogen gas is changed when the forming a metal film is repeated. 
     
     
         16 . The method of  claim 15 , wherein the ratio of the flow rate of the ammonia gas to the flow rate of the hydrogen gas is increased when the forming a metal film is repeated. 
     
     
         17 . An apparatus for forming a base film of a graphene, comprising:
 a CVD module configured to form a metal film as a base film of a graphene on a substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas;   a first heating module configured to heat the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and   a second heating module configured to heat the substrate to a temperature at which crystal grains of metal are grown in the metal film,   wherein the temperature of the substrate heated in the second heating module is higher than the temperature of the substrate heated in the first heating module.   
     
     
         18 . The apparatus of  claim 17 , wherein the substrate circulates the CVD module, the first heating module and the second heating module in this order, and the circulation of the substrate is repeated. 
     
     
         19 . The apparatus of  claim 18 , wherein, in the CVD module, a ratio of a flow rate of the ammonia gas to a flow rate of the hydrogen gas is changed when the formation of the metal film is repeated. 
     
     
         20 . The apparatus of  claim 19 , wherein in the CVD module, the ratio of the flow rate of the ammonia gas to the flow rate of the hydrogen gas is increased when the formation of the metal film is repeated.