Substrates for polycrystalline diamond cutters with unique properties

Abstract

A compact, a superabrasive compact and a method of making the compact and superabrasive compact are disclosed. A compact may include a plurality of carbide particles, a binder, and a species. The binder may be dispersed among the plurality of tungsten carbide particles. The species may be dispersed in the compact, wherein the binder has a melting point from about 600° C. to about 1350° C. at ambient pressure. A superabrasive compact may include a diamond table and a substrate. The diamond table may be attached to the substrate. The substrate may have a binder. The melting point of the binder is from about 600° C. to about 1350° C. at high pressure from about 30 kbar to about 100 kbar.

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         29 . A method of making a superabrasive compact, comprising:
 positioning a plurality of superabrasive particles proximate to a substrate, wherein the substrate has a hard metal, a binder, and a species;   subjecting the superabrasive particles and the substrate to a high pressure high temperature process at conditions suitable for producing the superabrasive compact; and   dissolving the species into a binder in the substrate during the high pressure high temperature process, wherein the dissolved species remain in solid solution with the binder after cooling down to room temperature and ambient pressure.   
     
     
         30 . The method of  claim 29 , wherein the substrate is a cemented tungsten carbide or nickel based tungsten carbide. 
     
     
         31 . The method of  claim 29 , wherein the superabrasive particles are selected from a group consisting of cubic boron nitride, diamond, diamond composite materials, and diamond like materials. 
     
     
         32 . The method of  claim 29 , wherein the elevated temperature and pressure are more than about 600° C. and about 1 kbar respectively. 
     
     
         33 . The method of  claim 29 , wherein the plurality of superabrasive particles are a partially leached polycrystalline diamond table. 
     
     
         34 . The method of  claim 33 , further comprising bonding the substrate to the at least partially leached polycrystalline diamond table. 
     
     
         35 . The method of  claim 29 , further comprising sweeping the plurality of superabrasive particles from the substrate. 
     
     
         36 . The method of  claim 29 , wherein the species is selected from the group consisting of elements, compounds, and eutectic alloy. 
     
     
         37 . The method of  claim 36 , wherein the elements are selected from the group consisting of carbon, boron, beryllium, aluminum, manganese, sulfur, and phosphorus. 
     
     
         38 . The method of  claim 36 , wherein the compounds comprise at least one of beryllium compound, boron compound, nitride compound, aluminum compound, silicon compound, or phosphorus compound. 
     
     
         39 . The method of  claim 36 , wherein the eutectic alloy comprises at least one of beryllium alloy, boron alloy, carbide alloy, aluminum alloy, silicon alloy, sulfur alloy or phosphorus alloy. 
     
     
         40 . The method of  claim 36 , wherein the elements comprise free carbons. 
     
     
         41 . The method of  claim 29 , wherein, after the high pressure high temperature process, the binder comprises a supersaturated solid solution of the species in the binder. 
     
     
         42 . The method of  claim 29 , wherein, after the high pressure high temperature process, the binder contains a concentration of the species that exceeds a saturation limit of the species in the binder. 
     
     
         43 . The method of  claim 42 , wherein after the high pressure high temperature process, the substrate exhibits pore sizes of less than 10 microns in diameter. 
     
     
         44 . A superabrasive compact, comprising:
 a polycrystalline diamond table; and   a substrate attached to the polycrystalline diamond table, wherein the substrate has a binder and free carbons, wherein the melting point of the binder is from about 600° C. to about 1350° C. at a pressure from about 30 kbar to about 100 kbar.   
     
     
         45 . The superabrasive compact of  claim 44 , wherein the substrate is at least one of cemented tungsten carbide or nickel based tungsten carbide. 
     
     
         46 . The superabrasive compact of  claim 44 , wherein the substrate contains at least one of tungsten carbide, chromium carbide, or cobalt. 
     
     
         47 . The superabrasive compact of  claim 44 , wherein the substrate comprises at least one species from the group consisting of elements, compounds, and eutectic alloy. 
     
     
         48 . The superabrasive compact of  claim 47 , wherein the elements comprise at least one of aluminum, magnesium, manganese, sulfide, or phosphorus. 
     
     
         49 . The superabrasive compact of  claim 47 , wherein the compounds comprise at least one of beryllium compound, boron compound, nitride compound, aluminum compound, silicon compound, or phosphorus compound. 
     
     
         50 . The superabrasive compact of  claim 47 , wherein the eutectic alloy comprises at least one of beryllium alloy, boron alloy, carbide alloy, aluminum alloy, silicon alloy, sulfur alloy or phosphorus alloy. 
     
     
         51 . The superabrasive compact of  claim 47 , wherein after the high pressure high temperature process, the binder comprises a supersaturated solid solution of the species in the binder. 
     
     
         52 . The superabrasive compact of  claim 47 , wherein after the high pressure high temperature process, the binder contains a concentration of the species that exceeds a saturation limit of the species in the binder. 
     
     
         53 . The superabrasive compact of  claim 52 , wherein after the high pressure high temperature process, the substrate exhibits pore sizes of less than 10 microns in diameter. 
     
     
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