US2017260641A1PendingUtilityA1

Apparatus and method for uniform metallization on substrate

Assignee: ACM RESEARCH SHANGHAI INCPriority: Nov 25, 2014Filed: Nov 25, 2014Published: Sep 14, 2017
Est. expiryNov 25, 2034(~8.3 yrs left)· nominal 20-yr term from priority
Inventors:Xi WangHui Wang
C25D 17/002C25D 5/20C25D 17/06C25D 21/10C25D 5/04C25D 17/001
57
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Claims

Abstract

An apparatus and method for uniform metallization on substrate are provided, achieving highly uniform metallic film deposition at a rate far greater than a conventional film growth rate in electrolyte solutions. The apparatus includes an immersion bath ( 3021 ), at least one set of electrode ( 3002 ), a substrate holder ( 3003 ), at least one ultra/mega sonic device ( 3004 ), a reflection plate ( 3005 ), and a rotating actuator ( 3030 ). The immersion bath contains at least one metal salt electrolyte ( 3020 ). The at least one set of electrode ( 3002 ) connects to an independent power supply. The substrate holder ( 3003 ) holds at least one substrate and electrically connects with a conductive side of the substrate. The conductive side of the substrate is exposed to face the electrode. The at least one ultra/mega sonic device ( 3004 ) and the reflection plate ( 3005 ) are disposed parallel for generating ultra/mega sonic standing wave in the immersion bath. The rotating actuator ( 3030 ) rotates the substrate holder ( 3003 ) along its axis in the standing wave field, so as to result in a uniform overall power intensity distribution across the substrate in an accumulated time.

Claims

exact text as granted — not AI-modified
1 . An apparatus for uniform metallization on substrate comprising:
 an immersion bath containing at least one metal salt electrolyte;   at least one set of electrode connecting to an independent power supply;   a substrate holder holding at least one substrate and electrically connecting with a conductive side of the substrate, the conductive side of the substrate exposed to face the electrode;   at least one ultra/mega sonic device and a reflection plate disposed parallel for generating ultra/mega sonic standing wave in the immersion bath; and   a rotating actuator rotating the substrate holder along its axis in the standing wave field, so as to result in a uniform overall power intensity distribution across the substrate in an accumulated time.   
     
     
         2 . The apparatus of  claim 1 , further comprising a horizontal actuator oscillating the substrate holder along propagation direction of the ultra/mega sonic standing wave. 
     
     
         3 . The apparatus of  claim 2 , wherein the amplitude of the substrate oscillation equals to 
       
         
           
             
               
                 N 
                 · 
                 
                   λ 
                   4 
                 
               
               , 
               
                 N 
                 = 
                 1 
               
               , 
               2 
               , 
               
                 3 
                  
                 
                     
                 
                  
                 … 
               
             
           
         
       
       where λ is the wavelength of the ultra/mega sonic standing wave and N is an integer. 
     
     
         4 . The apparatus of  claim 1 , further comprising a horizontal actuator oscillating the substrate holder along a direction tilted an angle θ relative to normal direction of propagation direction of the ultra/mega sonic standing wave. 
     
     
         5 . The apparatus of  claim 4 , wherein the amplitude of the substrate oscillation equals to 
       
         
           
             
               
                 
                   N 
                   · 
                   
                     λ 
                     4 
                   
                 
                 
                   sin 
                    
                   
                       
                   
                    
                   θ 
                 
               
               , 
               
                 N 
                 = 
                 1 
               
               , 
               2 
               , 
               
                 3 
                  
                 
                     
                 
                  
                 … 
               
             
           
         
       
       where λ is the wavelength of the ultra/mega sonic standing wave and N is an integer, θ is the angle between the substrate oscillation direction and the normal direction of propagation direction of the ultra/mega sonic standing wave. 
     
     
         6 . The apparatus of  claim 4 , wherein the θ is 0-45 degrees. 
     
     
         7 . The apparatus of  claim 1 , further comprising a vertical actuator moving the substrate holder up and down to load or unload the substrate into or out of the immersion bath. 
     
     
         8 . The apparatus of  claim 1 , further comprising a vertical actuator oscillating the substrate holder along a direction that an angle θ is formed between the substrate holder oscillation direction and normal direction of propagation direction of the ultra/mega sonic standing wave. 
     
     
         9 . The apparatus of  claim 8 , wherein the amplitude of the substrate oscillation equals to 
       
         
           
             
               
                 
                   N 
                   · 
                   
                     λ 
                     4 
                   
                 
                 
                   sin 
                    
                   
                       
                   
                    
                   θ 
                 
               
               , 
               
                 N 
                 = 
                 1 
               
               , 
               2 
               , 
               
                 3 
                  
                 
                     
                 
                  
                 … 
               
             
           
         
       
       where λ is the wavelength of the ultra/mega sonic standing wave and N is an integer, θ is the angle between the substrate oscillation direction and the normal direction of propagation direction of the ultra/mega sonic standing wave. 
     
     
         10 . The apparatus of  claim 8 , wherein the vertical actuator moves the substrate holder up and down to load or unload the substrate into or out of the immersion bath. 
     
     
         11 . The apparatus of  claim 8 , wherein the vertical actuator oscillates the substrate holder along the direction perpendicular to the horizontal plane. 
     
     
         12 . The apparatus of  claim 8 , wherein the vertical actuator oscillates the substrate holder along the direction tilted an angle relative to the normal direction of the horizontal plane. 
     
     
         13 . The apparatus of  claim 12 , wherein the substrate and the electrode are set with a tilted angle relative to the horizontal plane. 
     
     
         14 . The apparatus of  claim 1 , wherein each set of electrode includes one piece of electrode or more pieces of electrodes with independent power control. 
     
     
         15 . The apparatus of  claim 1 , further comprising at least one layer of permeable membrane being set between the substrate and the electrode. 
     
     
         16 . The apparatus of  claim 1 , wherein the rotation speed of the rotating actuator is in the range of 10 to 100 rpm. 
     
     
         17 . The apparatus of  claim 1 , wherein the ultra/mega sonic device and the reflection plate are mounted on opposite sidewalls of the immersion bath and tilt an angle θ relative to the substrate oscillation direction, and the substrate is set parallel to the horizontal plane, the substrate oscillation direction is perpendicular to the horizontal plane. 
     
     
         18 . The apparatus of  claim 1 , wherein the ultra/mega sonic device and the reflection plate are mounted on opposite sidewalls of the immersion bath and perpendicular to the horizontal plane, the substrate and the electrode are set with a tilted angle relative to the horizontal plane, the substrate is oscillated along a direction tilted the angle relative to the normal direction of the horizontal plane. 
     
     
         19 . The apparatus of  claim 1 , further comprising an adjusting mechanism for adjusting the surface of the reflection plate to be parallel to the surface of the ultra/mega sonic device. 
     
     
         20 . The apparatus of  claim 19 , wherein the adjusting mechanism includes an oscillating actuator for oscillating the reflection plate along propagation direction of the ultra/mega sonic standing wave, the oscillation amplitude is equal to N times of half wavelength of the ultra/mega sonic standing wave, N is an integer number from 1 to 10. 
     
     
         21 . The apparatus of  claim 20 , wherein the frequency of the oscillating actuator is 1 to 10 HZ. 
     
     
         22 . An apparatus for uniform metallization on substrate comprising:
 an immersion bath containing at least one metal salt electrolyte;   at least one set of electrode connecting to an independent power supply;   a substrate holder holding at least one substrate and electrically connecting with a conductive side of the substrate, the conductive side of the substrate exposed to face the electrode;   at least one ultra/mega sonic device for generating ultra/mega sonic wave in the immersion bath; and   a rotating actuator rotating the substrate holder along its axis in the acoustic wave field, so as to result in a uniform overall power intensity distribution across the substrate in an accumulated time.   
     
     
         23 . The apparatus of  claim 22 , further comprising a vertical actuator oscillating the substrate holder along normal direction of propagation direction of the ultra/mega sonic wave. 
     
     
         24 . The apparatus of  claim 22 , further comprising an acoustic reflector placed with a tilted angle relative to the ultra/mega sonic device, avoiding forming standing wave across the surface of the substrate. 
     
     
         25 . The apparatus of  claim 24 , wherein the acoustic reflector is tilted at its width direction to form the tilted angle relative to the ultra/mega sonic device, so as to reflect the acoustic wave upwards and out of the immersion bath. 
     
     
         26 . The apparatus of  claim 25 , wherein the ultra/mega sonic device and the tilted acoustic reflector set the path where the acoustic stream flows horizontally and then out of the immersion bath. 
     
     
         27 . A method for uniform metallization on substrate comprising:
 supplying at least one metal salt electrolyte into an immersion bath;   transferring a substrate to a substrate holder that is electrically connected with a conductive side of the substrate and the conductive side of the substrate exposed to face an electrode connecting to an independent power supply;   applying a first bias voltage to the substrate;   rotating the substrate;   immersing the substrate into the immersion bath;   applying an electrical current to the substrate;   turning on an ultra/mega sonic device;   oscillating the substrate holder in the acoustic wave field, and meanwhile periodically changing the distance of space between the ultra/mega sonic device and a reflection plate;   turning off the ultra/mega sonic device and stopping oscillation of the substrate holder and stopping periodically changing the distance of space between the ultra/mega sonic device and the reflection plate;   applying a second bias voltage to the substrate;   bringing the substrate out of the metal salt electrolyte; and   stopping rotating the substrate.   
     
     
         28 . The method of  claim 27 , wherein
 the first bias voltage is 0.1V to 10V;   the electrical current is 0.1 A to 100 A;   the ultra/mega sonic device has an operating frequency of 20 KHz to 10 MHz and a power intensity of 0.01 to 3 W/cm2;   the substrate oscillates with an amplitude of 1 mm to 300 mm and a frequency of 0.001 to 0.5 Hz;   the second bias voltage is 0.1V to 5V.   
     
     
         29 . The method of  claim 27 , wherein the substrate rotates with a rotation speed in range of 10 rpm to 100 rpm. 
     
     
         30 . The method of  claim 27 , wherein the amplitude of the substrate oscillation equals to 
       
         
           
             
               
                 
                   N 
                   · 
                   
                     λ 
                     4 
                   
                 
                 
                   sin 
                    
                   
                       
                   
                    
                   θ 
                 
               
               , 
               
                 N 
                 = 
                 1 
               
               , 
               2 
               , 
               
                 3 
                  
                 
                     
                 
                  
                 … 
               
             
           
         
       
       where λ is the wavelength of the ultra/mega sonic wave and N is an integer, θ is the angle between substrate oscillation direction and the normal direction of propagation direction of the ultra/mega sonic wave. 
     
     
         31 . The method of  claim 27 , wherein the frequency of the space distance changing periodically is larger than the frequency of substrate oscillation. 
     
     
         32 . The method of  claim 27 , wherein the amplitude of the substrate oscillation in the acoustic wave field is controlled as integer times of quarter wavelength of the ultra/mega sonic wave. 
     
     
         33 . The method of  claim 27 , wherein the substrate oscillates with an angle θ in range of 0 to 45 degree, tilted to the normal direction of propagation direction of the ultra/mega sonic wave, and the amplitude of the substrate oscillation equals to 
       
         
           
             
               
                 
                   N 
                   · 
                   
                     λ 
                     4 
                   
                 
                 
                   sin 
                    
                   
                       
                   
                    
                   θ 
                 
               
               , 
               
                 N 
                 = 
                 1 
               
               , 
               2 
               , 
               
                 3 
                  
                 
                     
                 
                  
                 … 
               
             
           
         
       
       where λ is the wavelength of the ultra/mega sonic wave and N is an integer.

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