Method for manufacturing electrode and resistive random access memory

Abstract

A method for manufacturing an electrode including the following steps is provided. A conductive layer is formed on a base material. A radio frequency physical vapor deposition (RF PVD) transition metal compound layer is formed on the conductive layer by using a RF PVD. A sacrificial layer is formed on the RF PVD transition metal compound layer. A planarization process is performed to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer.

1 . A method for manufacturing an electrode, comprising:
 forming a conductive layer on a base material;   forming a radio frequency physical vapor deposition (RF PVD) transition metal compound layer on the conductive layer by using a RF PVD;   forming a sacrificial layer on the RF PVD transition metal compound layer; and   performing a planarization process to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer.   
     
     
         2 . The method for manufacturing the electrode according to  claim 1 , wherein a material of each of the conductive layer and the sacrificial layer comprises titanium nitride, titanium, tantalum nitride, or a combination thereof. 
     
     
         3 . The method for manufacturing the electrode according to  claim 1 , wherein a method of forming the conductive layer and the sacrificial layer comprises a physical vapor deposition (PVD) or a chemical vapor deposition (CVD). 
     
     
         4 . The method for manufacturing the electrode according to  claim 1 , before forming the conductive layer, further comprising forming an adhesive layer on the base material, a material of the adhesive layer comprising titanium, tantalum, indium tin oxide, or a combination thereof. 
     
     
         5 . The method for manufacturing the electrode according to  claim 4 , wherein a method of forming the adhesive layer comprises a PVD or a CVD. 
     
     
         6 . The method for manufacturing the electrode according to  claim 1  is used for manufacturing a lower electrode of a resistive random access memory. 
     
     
         7 . A resistive random access memory, comprising:
 a base material;   a lower electrode, comprising:
 a conductive layer disposed on the base material; and 
 an RF PVD transition metal compound layer disposed on the conductive layer; 
   a variable resistance layer disposed on the RF PVD transition metal compound layer; and   an upper electrode disposed on the variable resistance layer.   
     
     
         8 . The resistive random access memory according to  claim 7 , wherein the lower electrode further comprises an adhesive layer, the adhesive layer is disposed between the base material and the conductive layer, and a material of the adhesive layer comprises titanium, tantalum, indium tin oxide, or a combination thereof. 
     
     
         9 . The resistive random access memory according to  claim 7 , wherein a material of the conductive layer comprises titanium nitride, titanium, tantalum nitride, or a combination thereof. 
     
     
         10 . The resistive random access memory according to  claim 7 , wherein a thickness of the RF PVD transition metal compound layer is between 10 nm and 20 nm.