US2017251158A1PendingUtilityA1
Solid-state image sensing device
Est. expiryOct 18, 2033(~7.2 yrs left)· nominal 20-yr term from priority
H04N 25/50H04N 5/37455H04N 5/351H04N 5/378H04N 25/78
50
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A CMOS image sensor used as a solid-state image sensing device includes a pixel circuit for outputting a voltage of a level corresponding to the illuminance, and an A/D converter for converting an output voltage of the pixel circuit into a digital signal. The resolution on the low illuminance side is higher than the resolution on the high illuminance side in the A/D converter. Thus, the dynamic range can be increased and the operation speed can be increased, compared to the case in which the resolution is constant independent of the illuminance.
Claims
exact text as granted — not AI-modified1 . A solid-state image sensing device comprising:
a pixel circuit for outputting a voltage of a level corresponding to the illuminance; and an A/D converter for converting an output voltage of the pixel circuit into a digital signal, wherein the resolution on a low illuminance side is higher than the resolution on a high illuminance side in the A/D converter.
2 - 13 . (canceled)Join the waitlist — get patent alerts
Track US2017251158A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.