US2017250058A1PendingUtilityA1

Plasma processing apparatus and precoating method

Assignee: TOKYO ELECTRON LTDPriority: Feb 29, 2016Filed: Feb 27, 2017Published: Aug 31, 2017
Est. expiryFeb 29, 2036(~9.6 yrs left)· nominal 20-yr term from priority
H01J 37/32357H01J 37/32495C23C 16/50H01J 37/32082H01J 37/3244H01J 37/3222C23C 16/455C23C 16/4404C23C 16/4405H01J 37/32458H10P 50/242H10P 14/6514H10P 14/6336
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Claims

Abstract

A plasma processing apparatus includes a partition plate, an antenna, and a high frequency power supply. The partition plate has a plurality of holes and partitions an inside of the processing container into a plasma generation chamber and a processing chamber. The antenna generates plasma of the plasma excitation gas supplied into the plasma generation chamber. The high frequency power supply generates plasma of a precoating gas supplied into the plasma generation chamber and introduced into the processing chamber through the plurality of holes of the partition plate. The plasma processing apparatus performs a precoating on a surface of a partition plate on a side of the processing chamber by causing the high frequency power supply to generate plasma of the precoating gas before a plasma processing using the plasma of the plasma excitation gas is performed.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A plasma processing apparatus comprising:
 a processing container;   a partition plate that has a plurality of holes each having a maximum width that is two times or less a sheath length corresponding to plasma of a plasma excitation gas, and partitions an inside of the processing container into a plasma generation chamber and a processing chamber;   a first gas supply unit that supplies the plasma excitation gas to the plasma generation chamber;   a second gas supply unit that supplies a precoating gas to at least one of the plasma generation chamber and the processing chamber;   a first plasma source that generates plasma of the plasma excitation gas supplied into the plasma generation chamber by the first gas supply unit;   a second plasma source that generates plasma of the precoating gas supplied into the plasma generation chamber by the second gas supply unit and introduced into the processing chamber through the plurality of holes of the partition plate, or plasma of the precoating gas supplied into the processing chamber by the second gas supply unit; and   a controller that causes the second plasma source to generate the plasma of the precoating gas before a plasma processing using the plasma of the plasma excitation gas is performed such that a precoating is performed on a surface of a partition plate on a side of the processing chamber.   
     
     
         2 . The plasma processing apparatus of  claim 1 , wherein the first plasma source generates the plasma of the plasma excitation gas in the plasma generation chamber by emitting microwaves into the plasma generation chamber, and the second plasma source generates the plasma of the precoating gas in the processing chamber by supplying a high frequency power to an electrode provided in the processing chamber or a placing table inside the processing container. 
     
     
         3 . The plasma processing apparatus of  claim 1 , wherein the first plasma source generates the plasma of the plasma excitation gas in the plasma generation chamber by forming an induction field in the plasma generation chamber when a high frequency power is supplied, the second plasma source generates the plasma of the precoating gas in the processing chamber by supplying a high frequency power to an electrode provided in the processing chamber or a placing table inside the processing container, and the plasma processing apparatus further comprises a switch that selectively supplies the high frequency power from the second plasma source to any one of the electrode provided in the processing chamber, the placing table inside the processing chamber, and the first plasma source. 
     
     
         4 . A precoating method comprising:
 providing a plasma processing apparatus that includes: a processing container; a partition plate that has a plurality of holes each having a maximum width that is two times or less a sheath length corresponding to plasma of a plasma excitation gas, and partitions an inside of the processing container into a plasma generation chamber and a processing chamber; a first gas supply unit that supplies the plasma excitation gas to the plasma generation chamber; a second gas supply unit that supplies a precoating gas to at least one of the plasma generation chamber and the processing chamber; a first plasma source that generates plasma of the plasma excitation gas supplied into the plasma generation chamber by the first gas supply unit; and a second plasma source that generates plasma of the precoating gas supplied into the processing chamber by the second gas supply unit or plasma of the precoating gas supplied into the plasma generation chamber by the second gas supply unit and introduced into the processing chamber through the plurality of holes of the partition plate; and   causing the second plasma source to generate the plasma of the precoating gas before a plasma processing using the plasma of the plasma excitation gas is performed such that a precoating is performed on a surface of the partition plate on a side of the processing chamber.

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