Method for producing metal carbonitride film or metalloid carbonitride film, metal carbonitride film or metalloid carbonitride film, and apparatus for producing metal carbonitride film or metalloid carbonitride film

Abstract

Provided is a method and apparatus that can form a metal carbonitride film or a metalloid carbonitride film at low temperature. A metal carbonitride film or a metalloid carbonitride film is formed by supplying onto a film formation object a nitrogen source and a metal source or a metalloid source, the nitrogen source containing a guanidine compound represented by the following general formula (1): where a plurality of Rs are the same or different, each represent a hydrogen atom, a linear, branched or cyclic alkyl group of 1 to 5 carbon atoms or a trialkylsilyl group of 1 to 9 carbon atoms, and, depending on circumstances, bond to each other to form a ring.

1 . A method for producing a metal carbonitride film or a metalloid carbonitride film, the method comprising forming a metal carbonitride film or a metalloid carbonitride film by supplying onto a film formation object a nitrogen source and a metal source or a metalloid source, the nitrogen source containing a guanidine compound represented by the following general formula (1): 
       
         
           
           
               
               
           
         
         where a plurality of Rs are the same or different, each represent a hydrogen atom, a linear, branched or cyclic alkyl group of 1 to 5 carbon atoms or a trialkylsilyl group of 1 to 9 carbon atoms, and, depending on circumstances, bond to each other to form a ring. 
       
     
     
         2 . The method for producing a metal carbonitride film or a metalloid carbonitride film according to  claim 1 , wherein a silicon carbonitride film is formed as the metalloid carbonitride film. 
     
     
         3 . The method for producing a metal carbonitride film or a metalloid carbonitride film according to  claim 1 , wherein a guanidine compound solution containing at least one solvent selected from the group consisting of aliphatic hydrocarbons, aromatic hydrocarbons, and ethers is used as the nitrogen source. 
     
     
         4 . The method for producing a metal carbonitride film or a metalloid carbonitride film according to  claim 1 , wherein a metal halide or a metalloid halide is used as the metal source or the metalloid source. 
     
     
         5 . The method for producing a metal carbonitride film or a metalloid carbonitride film according to  claim 1 , wherein a film formation temperature for the metal carbonitride film or the metalloid carbonitride film is below 600° C. 
     
     
         6 . The method for producing a metal carbonitride film or a metalloid carbonitride film according to  claim 5 , wherein the film formation temperature for the metal carbonitride film or the metalloid carbonitride film is below 550° C. 
     
     
         7 . The method for producing a metal carbonitride film or a metalloid carbonitride film according to  claim 6 , wherein the film formation temperature for the metal carbonitride film or the metalloid carbonitride film is not more than 500° C. 
     
     
         8 . A metal carbonitride film or metalloid carbonitride film obtained by the method for producing a metal carbonitride film or a metalloid carbonitride film according to  claim 1 . 
     
     
         9 . An apparatus for producing a metal carbonitride film or a metalloid carbonitride film, the apparatus being for use in the method for producing a metal carbonitride film or a metalloid carbonitride film according to  claim 1 , the apparatus comprising:
 a reaction chamber including a placement section in which a film formation object is to be placed;   a metal or metalloid source supplying section that supplies the metal source or the metalloid source into the reaction chamber; and   a nitrogen source supplying section that supplies the nitrogen source into the reaction chamber.