Electronic device and methods to customize electronic device electromagnetic emissions

Abstract

A semiconductor device comprises a semiconductor substrate, one or more circuits disposed on the semiconductor substrate, and a modification of any one of hardware, software or firmware of the electronic device that generates emission of electromagnetic energy from the semiconductor device with desired characteristic(s), without changing a designed interface functionality of the semiconductor device. Method are also provided for modifying the semiconductor device and identifying modified semiconductor device.

What is claim is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor substrate;   one or more circuits disposed on said semiconductor substrate; and   a means for modifying, without changing a designed interface functionality of said semiconductor device, characteristic(s) of an electromagnetic energy emittable from said semiconductor device.   
     
     
         2 . The semiconductor device of  claim 1 , wherein said means comprises one or more trace elements within said one or more circuits, each of said one or more trace elements with one end thereof being directly coupled to interconnect between two circuit elements within said one or more circuits and with an opposite end thereof being terminated without coupling to any one of trace(s) between circuit elements within said one or more circuits. 
     
     
         3 . The semiconductor device of  claim 1 , wherein said means comprises trace elements spaced at a predetermined distance from each other along a length of at least one circuit interconnect, each of said trace elements with one end thereof being directly coupled to said at least one interconnect and with an opposite end thereof being terminated without coupling to any one of interconnect(s) between circuit elements within said one or more circuits. 
     
     
         4 . The semiconductor device of  claim 1 , wherein said means comprises at least one interconnect between at least a pair of circuit elements in said semiconductor device, said at least one interconnect with one or more regions of a smaller or larger width, said one or more regions affecting width of peak structure(s) of emitted electromagnetic energy. 
     
     
         5 . The semiconductor device of  claim 1 , wherein said means comprises one or more interconnect with a varying width, said varying width modifying impedance of said one or more interconnect. 
     
     
         6 . The semiconductor device of  claim 1 , wherein said means comprises a modification or doping of gate(s) and/or pattern(s) of gates within said semiconductor device resulting in a timing change of said gate(s) and/or said pattern(s) of gates, said timing change modifying frequency and amplitude envelope of non-linear mixing products. 
     
     
         7 . The semiconductor device of  claim 1 , wherein said means comprises at least one trace element coupling at least one circuit element in said circuit with an unused I/O pin in said semiconductor device. 
     
     
         8 . The semiconductor device of  claim 1 , wherein said means comprises:
 at least one interconnect between at least two circuit elements in said semiconductor device, with one or more regions of a smaller or larger width, said one or more regions affecting width of peak structure(s) of emitted electromagnetic energy; and   one or more trace elements within said one or more circuits, each of said one or more trace elements with one end thereof being directly coupled to said one or more regions of a smaller or larger width and with an opposite end thereof being terminated without coupling to any one of trace(s) between circuit elements within said one or more circuits.   
     
     
         9 . The semiconductor device of  claim 1 , wherein said means comprises replacement of one circuit logic element with another circuit logic element changing an intermediate logic function(s) without changing end logic function(s). 
     
     
         10 . An integrated circuit (IC) device, comprising:
 a casing;   one or more input/output connections on or extending from an interior surface of said casing;   one or more dies within said casing;   leads between said one or more die and said one or more input/output connections;   boding wires, each coupling each lead to said one or more die; and   a means for modifying, without changing a designed interface functionality of said IC, characteristic(s) of an electromagnetic energy emittable from said IC.   
     
     
         11 . The IC device of  claim 10 , wherein said means comprises one or more trace elements, each of said one or more trace elements with one end thereof being directly coupled to a lead and with an opposite end thereof being terminated without coupling to any one of leads. 
     
     
         12 . The IC device of  claim 10 , wherein said means comprises one or more trace elements, each of said one or more trace elements with one end thereof being directly coupled to a bonding wire and with an opposite end thereof being terminated without coupling to any one of bonding wires. 
     
     
         13 . The IC device of  claim 10 , wherein said means comprises trace elements spaced at a predetermined distance from each other along a length of at least one lead, each of said trace elements with one end thereof being directly coupled to said at least one lead and with an opposite end thereof being terminated without coupling to any one of leads. 
     
     
         14 . The IC device of  claim 10 , wherein said means comprises at least one lead with one or more regions of a smaller or larger width, said one or more regions affecting width of peak structure(s) of emitted electromagnetic energy. 
     
     
         15 . A printed circuit board (PCB)assembly, comprising:
 a PCB;   one or more electronic devices mounted on said PCB;   interconnects between said one or more electronic device; and   a means for modifying, without changing a designed interface functionality of said PCB assembly, characteristic(s) of an electromagnetic energy emittable from said PCB assembly.   
     
     
         16 . The PCB assembly of  claim 15 , wherein said means comprises one or more trace elements within said one or more electronic device, each of said one or more trace elements with one end thereof being directly coupled to an interconnect between two circuit elements within said one or more electronic device and with an opposite end thereof being terminated without coupling to any one of interconnect(s) between circuit elements within said one or more electronic device. 
     
     
         17 . The PCB assembly of  claim 15 , wherein said means comprises trace elements spaced at a predetermined distance from each other along a length of said interconnect(s), each of said trace elements with one end thereof being directly coupled to an interconnect between two electronic devices and with an opposite end thereof being terminated without coupling to any one of interconnect(s) between said one or more electronic devices. 
     
     
         18 . The PCB assembly of  claim 15 , wherein said means comprises one or more of from said interconnects with one or more regions of a smaller or larger width, said one or more regions affecting width of peak structure(s) of emitted electromagnetic energy. 
     
     
         19 . The PCB assembly of  claim 15 , wherein said means comprises one or more interconnects with a varying width, said varying width modifying impedance of said one or more trace. 
     
     
         20 . The PCB assembly of  claim 15 , wherein said means comprises a modification or doping of gate(s) and/or pattern(s) of gates within said one or more electronic devices resulting in a timing change of said gate(s) and/or said pattern(s) of gates, said timing change modifying frequency and amplitude envelope of non-linear mixing products.