US2017243949A1PendingUtilityA1

Liquid crystal display panel, array substrate and manufacturing method for thin-film transistor

Assignee: SHENZHEN CHINA STAR OPTOELECTPriority: Mar 26, 2015Filed: May 10, 2017Published: Aug 24, 2017
Est. expiryMar 26, 2035(~8.7 yrs left)· nominal 20-yr term from priority
Inventors:Dongzi Gao
H10P 14/42H10D 64/013G02F 1/13439H01L 29/4908H01L 21/28008H01L 29/78678H01L 27/1262G02F 1/1368H01L 2021/775H01L 27/1244H10D 86/021H10D 86/443H10D 86/0212H10D 86/60H10D 86/00H10D 30/6745H10D 30/6732H10D 30/0321H10D 30/0316H10D 30/6739G02F 2201/123
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Claims

Abstract

An LCD panel, an array substrate and a manufacturing method for TFT are disclosed. The method includes: providing a substrate; forming a first metal layer on the substrate, in which the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially; patterning the first metal layer to form a gate electrode of a TFT; sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode; forming a second metal layer on the ohmic contact layer; and patterning the second metal layer to form a source electrode and a drain electrode of the TFT. Hillock generated by the aluminum metal layer in a high temperature environment can be inhibited so as to avoid short-circuiting generated among the gate, the source and the drain electrodes of the TFT to ensure the display quality of an image.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An array substrate, comprising:
 a substrate;   a thin-film-transistor array having multiple thin film transistors; and   a pixel electrode;   wherein a gate electrode of the thin film transistor includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially;   and the pixel electrode is electrically connected with one of a source electrode and a drain electrode of the thin film transistor through a contact hole.   
     
     
         2 . The array substrate according to  claim 1 , wherein the source electrode and the drain electrode includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially. 
     
     
         3 . The array substrate according to  claim 1 , wherein the thin film transistor further includes a gate insulation layer formed on the gate electrode, a semiconductor layer formed on the gate insulation layer and an ohmic contact layer formed on the semiconductor layer, a source electrode and a drain electrode formed on the ohmic contact layer. 
     
     
         4 . A liquid crystal display panel, comprising:
 an array substrate, comprising:
 a substrate; 
 a thin-film-transistor array having multiple thin film transistors; and 
 a pixel electrode; 
   wherein a gate electrode of the thin film transistor includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially;   and the pixel electrode is electrically connected with one of a source electrode and a drain electrode of the thin film transistor through a contact hole.   
     
     
         5 . The liquid crystal display panel according to  claim 4 , wherein the source electrode and the drain electrode include an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially. 
     
     
         6 . The liquid crystal display panel according to  claim 4 , wherein the thin film transistor further includes a gate insulation layer formed on the gate electrode, a semiconductor layer formed on the gate insulation layer and an ohmic contact layer formed on the semiconductor layer, a source electrode and a drain electrode formed on the ohmic contact layer.

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