Semiconductor device

Abstract

To provide a technique capable of reducing the chip size of a semiconductor chip and particularly, a technique capable of reducing the chip size of a semiconductor chip in the form of a rectangle that constitutes an LCD driver by devising a layout arrangement in a short-side direction. In a semiconductor chip that constitutes an LCD driver, input protection circuits are arranged in a lower layer of part of a plurality of input bump electrodes and on the other hand, in a lower layer of the other part of the input bump electrodes, the input protection circuits are not arranged but SRAMs (internal circuits) are arranged.

What is claimed is: 
     
         1 . A semiconductor device comprising a semiconductor chip in the form of a rectangle having a first short side, a second short side opposite to the first short side, a first long side and a second long side opposite to the first long side, wherein the semiconductor chip includes:
 (a) a first plurality of first bump electrodes linearly arranged along the first long side of the semiconductor chip and arranged closer to the first long side than to the second long side; and   (b) a first electrostatic protection circuit which protects the semiconductor device against static electricity and is electrically coupled to the first bump electrodes,   wherein the first electrostatic protection circuit is arranged without overlapping any of the first bump electrodes in a plan view.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first bump electrodes are electrically coupled to an internal circuit via the first electrostatic protection circuits. 
     
     
         3 . The semiconductor device according to  claim 1 , further comprising:
 (c) a second plurality of second bump electrodes linearly arranged along the first long side of the semiconductor chip and arranged closer to the first long side than to the second long side,   wherein the first electrostatic protection circuit overlaps the second bump electrodes in the plan view.   
     
     
         4 . The semiconductor device according to  claim 3 , wherein the second bump electrodes are electrically coupled to the internal circuit via the first electrostatic protection circuits. 
     
     
         5 . The semiconductor device according to  claim 4 , wherein the number of the second bump electrodes is smaller than the number of the first bump electrodes. 
     
     
         6 . The semiconductor device according to  claim 3 , wherein:
 the semiconductor chip comprises a semiconductor substrate;   a plurality of wiring layers are formed over the semiconductor substrate;   first and second wirings are formed at an uppermost layer of the wiring layers and extend along the first long side, with the first wiring being arranged between the second wiring and the first long side, and   an insulating film is formed over the first and second wirings;   the first plurality of first bump electrodes are formed over the first and second wirings, and are connected to the first wiring through first openings formed in the insulating film; and   the second plurality of second bump electrodes are formed over the first and second wirings, and are connected to the second wiring through second openings formed in the insulating film; wherein:   all of the second openings are farther from the first long side than any of first openings.   
     
     
         7 . The semiconductor device according to  claim 6 , wherein:
 the first and second wirings include an aluminum film; and   the first and second bump electrodes include a gold film.   
     
     
         8 . The semiconductor device according to  claim 6 ,
 wherein the first wiring is different from the second wiring.   
     
     
         9 . The semiconductor device according to  claim 8 , wherein:
 none of the first plurality of first bump electrodes is connected to the second wiring, and   none of the second plurality of second bump electrode is connected to the first wiring.   
     
     
         10 . The semiconductor device according to  claim 6 , wherein:
 the first and second wirings extend parallel to one another as they pass under the first plurality of first bump electrodes and the second plurality of second bump electrodes, in a plan view of the device.   
     
     
         11 . The semiconductor device according to  claim 10 , wherein:
 the first and second wirings do not overlap one another as they pass under the first plurality of first bump electrodes and the second plurality of second bump electrodes, in a plan view of the device.   
     
     
         12 . A liquid crystal display having a driver comprising a semiconductor device in accordance with  claim 1 .