US2017237003A1PendingUtilityA1

Surface treatment of hydrophobic ferroelectric polymers for printing

Assignee: PALO ALTO RES CT INCPriority: Dec 12, 2008Filed: May 1, 2017Published: Aug 17, 2017
Est. expiryDec 12, 2028(~2.4 yrs left)· nominal 20-yr term from priority
H05K 2203/095H05K 2203/013H05K 3/1208H05K 2203/087H05K 3/381H05K 3/125H05K 2203/1173H01L 27/283H01L 51/052H01L 51/0022H01L 51/0558H01L 51/0012H01L 51/0005H10D 86/0241H10K 71/135H10K 10/484H10K 85/113H10K 10/471H10K 10/466H10K 19/10H10K 85/151H10K 71/611H10K 71/191
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Claims

Abstract

An embodiment is a method and apparatus to treat surface of polymer for printing. Surface of a polymer having a surface energy modified for a time period to control a feature characteristic and/or provide a hysteresis behavior. A material is printed on the surface to form a circuit pattern having at least one of the controlled feature characteristic and the hysteresis behavior.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method comprising:
 modifying surface energy of surface of a polymer for a time period to control a feature characteristic and/or provide a hysteresis behavior; and   printing a material on the surface to form a circuit pattern having at least one of the controlled feature characteristic and the hysteresis behavior.   
     
     
         2 . The method of  claim 1  wherein modifying the surface energy comprises:
 exposing the surface of the polymer to/under at least one of an ultra-violet (UV) source and an ozone-generating source. 
 
     
     
         3 . The method of  claim 2  wherein exposing the surface comprises:
 adjusting the time period such that the feature characteristic reaches a desired level. 
 
     
     
         4 . The method of  claim 1  wherein the feature characteristic includes at least one of a feature size, a feature uniformity, a contact angle, and a line width. 
     
     
         5 . The method of  claim 1  wherein the polymer is a hydrophobic polymer or a ferroelectric material. 
     
     
         6 . The method of  claim 5  wherein the ferroelectric material is a Poly (Vinylidene Fluoride) (PVDF) co-polymer. 
     
     
         7 . The method of  claim 1  wherein printing the material comprises:
 printing a conductor or a semiconductor, including metal nanoparticles, or a polymeric ink on the surface. 
 
     
     
         8 . The method of  claim 1  wherein printing the material comprises:
 printing the material on the surface using ink jet printing. 
 
     
     
         9 . The method of  claim 7  wherein printing the metal or the polymeric ink comprises:
 printing a circuit including at least one of an active element and a passive element. 
 
     
     
         10 . The method of  claim 9  wherein printing the circuit comprises:
 printing a non-volatile memory cell. 
 
     
     
         11 . A system comprising:
 at least one of an ultra-violet (UV) source and an ozone-generating source that generates ozone;   a polymer having a surface exposed to/under the at least one of the UV source and the ozone-generating source for a pre-determined time period, the surface having a surface energy modified to control a feature characteristic and/or provide a hysteresis behavior; and   an ink jet printer to print a circuit pattern on the surface with the modified surface energy.   
     
     
         12 . The system of  claim 11  wherein the feature characteristic includes at least one of a feature size, a feature uniformity, a contact angle, and a line width. 
     
     
         13 . The system of  claim 11  wherein the polymer is a hydrophobic polymer or a ferroelectric material. 
     
     
         14 . The system of  claim 13  wherein the ferroelectric material is a Poly (Vinylidene Fluoride) (PVDF) co-polymer. 
     
     
         15 . The system of  claim 11  wherein the circuit pattern comprises:
 a circuit including at least one of an active element and a passive element. 
 
     
     
         16 . The system of  claim 11  wherein the TFT circuit comprises:
 a non-volatile memory cell.

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