Lighting emitting device with aligned-bonding

Abstract

A light-emitting device comprises a semiconductor light-emitting stack comprising a first connecting layer; and a substrate under the semiconductor light-emitting stack, wherein the substrate comprises a second connecting layer connecting the first connecting layer; wherein the first connecting layer comprises a first region, a first pattern, and a first connecting surface; wherein a difference of a reflectivity between the first pattern and the first region is larger than 20%; wherein the second connecting layer comprises a second region and a side of the first pattern fully contact the second region.

What is claimed is: 
     
         1 . A light-emitting device, comprising:
 a semiconductor light-emitting stack comprising a first connecting layer; and   a substrate under the semiconductor light-emitting stack, wherein the substrate comprises a second connecting layer connecting the first connecting layer;   wherein the first connecting layer comprises a first region, a first pattern, and a first connecting surface;   wherein a difference of a reflectivity between the first pattern and the first region is larger than 20%;   wherein the second connecting layer comprises a second region and a side of the first pattern fully contact the second region.   
     
     
         2 . The light-emitting device according to  claim 1 , wherein the first connecting surface is flat. 
     
     
         3 . The light-emitting device according to  claim 1 , wherein the reflectivity of the first region is smaller than 30%. 
     
     
         4 . The light-emitting device according to  claim 1 , wherein the first region comprises organic adhesive material or oxide material. 
     
     
         5 . The light-emitting device according to  claim 1 , wherein the reflectivity of the first pattern is larger than 50%. 
     
     
         6 . The light-emitting device according to  claim 1 , wherein the first pattern comprises metal. 
     
     
         7 . The light-emitting device according to  claim 1 , wherein the first region comprises multiple first sub-regions and the first pattern is between two of the multiple first sub-regions. 
     
     
         8 . The light-emitting device according to  claim 1 , wherein the second region is between the first pattern and the substrate. 
     
     
         9 . The light-emitting device according to  claim 1 , wherein the reflectivity of the second region is smaller than 30%. 
     
     
         10 . The light-emitting device according to  claim 1 , wherein the second region comprises insulating material. 
     
     
         11 . The light-emitting device according to  claim 1 , wherein the second connecting layer further comprises a second pattern with a reflectivity larger than 50%. 
     
     
         12 . The light-emitting device according to  claim 11 , wherein the second pattern comprises metal. 
     
     
         13 . The light-emitting device according to  claim 11 , wherein the second pattern and the first pattern form a third pattern. 
     
     
         14 . A light-emitting device, comprising:
 a substrate;   a semiconductor light-emitting stack on the substrate; and   a first connecting layer between the substrate and the semiconductor light-emitting stack;   wherein the first connecting layer comprises a first pattern and a first connecting surface;   wherein the first connecting surface comprises a plurality of first cavities and the first pattern is on a region of the first connection surface without the plurality of first cavities.   
     
     
         15 . The light-emitting device according to  claim 14 , wherein the substrate comprises a second connecting surface connecting the region of the first connection surface. 
     
     
         16 . The light-emitting device according to  claim 15 , wherein the second connecting surface comprises a second pattern, and the first pattern and the second pattern are overlapped. 
     
     
         17 . The light-emitting device according to  claim 16 , wherein a first virtual vertical axis passes through a center of the first pattern, a second virtual vertical axis passes through a center of the second pattern, and an offset having a distance between the first virtual vertical axis and the second virtual vertical axis is smaller than 20 μm such that the first pattern and the second pattern are not totally aligned. 
     
     
         18 . The light-emitting device according to  claim 14 , wherein the first pattern comprises metal. 
     
     
         19 . The light-emitting device according to  claim 15 , wherein the second pattern comprises metal. 
     
     
         20 . A light-emitting device, comprising:
 a substrate;   a semiconductor light-emitting stack on the substrate; and   a first connecting layer between the substrate and the semiconductor light-emitting stack;   wherein the first connecting layer comprises a first pattern and a first connecting surface;   wherein the first connecting surface comprises a plurality of first cavities and the first pattern is in one of the plurality of first cavities.