Fully integrated low-noise amplifier

Abstract

A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.

1 . An integrated amplifier device, comprising:
 an inductive input element,   an amplifier circuit,   an inductive output element, and   an inductive degeneration element,   wherein the amplifier circuit, said inductive output element and said inductive degeneration element are located on an inside of said inductive input element.   
     
     
         2 . The device according to  claim 1 , wherein the inductive input element is configured to permit an input current to flow between an input terminal and the amplifier circuit in a first direction, and the inductive output element is configured to permit an output current to flow between the amplifier circuit and a supply terminal in a second direction that is opposite to the first direction. 
     
     
         3 . The device according to  claim 1 , wherein the amplifier circuit comprises at least one first transistor configured to operate in an amplification mode. 
     
     
         4 . The device according to  claim 3 , wherein the amplifier circuit comprises a cascode assembly comprising the at least one first transistor and a second transistor. 
     
     
         5 . The device according to  claim 3 , wherein the inductive input element is coupled between a gate of the at least one first transistor and an input terminal of said device, the gate of the at least one first transistor being placed adjacent an end of the inductive input element. 
     
     
         6 . The device according to  claim 3 , wherein said inductive degeneration element is coupled between a source of the at least one first transistor and a ground terminal, the source of the at least one first transistor being placed adjacent to one end of said inductive degeneration element and the ground terminal being placed adjacent another end of said inductive degeneration element. 
     
     
         7 . The device according to  claim 1 , wherein said inductive input element comprises a metal track in the form of a non-intersecting spiral, with the amplifier circuit, said inductive output element and said inductive degeneration element located inside of said non-intersecting spiral. 
     
     
         8 . The device according to  claim 1 , wherein the amplifier circuit, said inductive output element and said inductive degeneration element are supported by an integrated circuit substrate. 
     
     
         9 . An integrated amplifier device, comprising:
 a semiconductor substrate;   a back end of line structure supported by said semiconductor substrate;   an amplifier circuit formed in and on said semiconductor substrate;   an inductive input element, inductive output element and inductive degeneration element provided within said back end of line structure;   wherein said inductive input element comprises a spiral shape; and   wherein the amplifier circuit, inductive output element and inductive degeneration element are located within the spiral shape of the inductive input element.   
     
     
         10 . The device of  claim 9 , wherein said back end of line structure includes metallization levels and the inductive input element, inductive output element and inductive degeneration element are formed in one or more of the metallization levels. 
     
     
         11 . The device of  claim 9 , wherein inductive output element also has a spiral shape, and where current flowing in the spiral shape of the inductive input element flows in an opposite direction of flowing in the spiral shape of the inductive output element. 
     
     
         12 . The device of  claim 11 , wherein the spiral shape of said inductive input element is in the form of a non-intersecting spiral and wherein the spiral shape of said inductive output element is in the form of an intersecting spiral.