US2017221957A1PendingUtilityA1

Imaging device and electronic apparatus

Assignee: SONY CORPPriority: Jan 21, 2014Filed: Apr 18, 2017Published: Aug 3, 2017
Est. expiryJan 21, 2034(~7.5 yrs left)· nominal 20-yr term from priority
H01L 27/14627H01L 27/14689H01L 27/14654H01L 27/14656H01L 27/14612H01L 27/1463H01L 27/1461H01L 27/1464H10F 39/1865H10F 39/8063H10F 39/8037H10F 39/8033H10F 39/811H10F 39/807H10F 39/803H10F 39/199H10F 39/186H10F 39/151H10F 39/18H10F 39/014H10F 39/158
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Claims

Abstract

An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An imaging device comprising:
 a plurality of photoelectric conversion regions including a first photoelectric conversion region that generates a logarithmic output image depending on irradiation light and a second photoelectric conversion region that generates a linear output image depending on irradiation light; and   a first element isolation region that is provided between adjacent first and second photoelectric conversion regions,   wherein the first element isolation region surrounds at least one of the first and second photoelectric conversion regions, and   wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region.   
     
     
         2 . The imaging device according to  claim 1 , further comprising:
 a second element isolation region that is provided between at least one of the photoelectric conversion regions and a pixel circuit region.   
     
     
         3 . The imaging device according to  claim 2 , wherein the first and second element isolation regions are configured of a material that blocks a diffusion current. 
     
     
         4 . The imaging device according to  claim 2 , wherein a PN junction diode is formed in at least some of the photoelectric conversion regions as a photo-sensor. 
     
     
         5 . The imaging device according to  claim 4 , wherein a transfer gate and a floating diffusion are further formed in at least some of the photoelectric conversion regions.

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