Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes an element layer, a plurality of first interconnect lines on the element layer, a first insulation layer including carbon having a uniform concentration distribution between the first interconnect lines, a plurality of second interconnect lines spaced from the first interconnect lines, and a second insulation layer between the second interconnect lines. An air spacing is included between the second interconnect lines.

1 . A semiconductor device, comprising:
 an element layer;   a plurality of first interconnect lines on the element layer, the first interconnect lines extending in a first direction;   a first insulation layer between the first interconnect lines and having a uniform carbon concentration distribution;   a plurality of second interconnect lines extending in the first direction and spaced from the first interconnect lines in a second direction different from the first direction; and   a second insulation layer adjacent the second interconnect lines, wherein an air gap is between the second interconnect lines.   
     
     
         2 . The device as claimed in  claim 1 , wherein the second insulation layer is between the second interconnect lines and includes the air gap. 
     
     
         3 . The device as claimed in  claim 2 , wherein a width of the air gap is less than a spacing between the second interconnect lines. 
     
     
         4 . The device as claimed in  claim 2 , wherein a width of the air gap is substantially equal to a spacing between the second interconnect lines. 
     
     
         5 . The device as claimed in  claim 1 , further comprising:
 a plurality of third interconnect lines between the first interconnect lines and the second interconnect lines; and   a third insulation layer between the third interconnect lines and having a non-uniform carbon concentration distribution.   
     
     
         6 . The device as claimed in  claim 1 , wherein:
 the first interconnect lines are separated by a first spacing, and   the second interconnect lines are separated by a second spacing different from the first spacing.   
     
     
         7 . The device as claimed in  claim 6 , wherein the first spacing is less than the second spacing. 
     
     
         8 . The device as claimed in  claim 1 , further comprising:
 a first number of contact plugs coupled to respective ones of the first interconnect lines; and   a second number of contact plugs coupled to respective ones of the second interconnect lines, wherein the first number is greater than the second number.   
     
     
         9 . The device as claimed in  claim 1 , wherein the first insulation layer has a lower surface below lower surfaces of the first interconnect lines. 
     
     
         10 . The device as claimed in  claim 9 , further comprising:
 a first dielectric layer between the first insulation layer and the first interconnect lines, wherein a lower surface of the first dielectric layer is below the lower surfaces of the first interconnect lines.   
     
     
         11 . The device as claimed in  claim 1 , wherein the second insulation layer has a lower surface below lower surfaces of the second interconnect lines. 
     
     
         12 . (canceled) 
     
     
         13 . The device as claimed in  claim 1 , wherein:
 each of the second interconnect lines includes a first portion and a second portion, and   the second insulation layer is adjacent to the first portion and is not adjacent to the second portion.   
     
     
         14 . The device as claimed in  claim 13 , wherein the air gap is adjacent to the second portion of the second interconnect lines. 
     
     
         15 . The device as claimed in  claim 1 , wherein:
 the first insulation layer includes a first portion and a second portion, and   the first and second portions include different materials.   
     
     
         16 . The semiconductor device as claimed in  claim 1 , wherein:
 the first interconnect lines have a first pitch, and   the second interconnect lines have a second pitch different from the first pitch.   
     
     
         17 . A semiconductor device, comprising:
 a first region including a first plurality of interconnect layers and a first plurality of insulation layers having a first structure over a first transistor; and   a second region including a second plurality of interconnect layers and a second plurality of insulation layers having a second structure over a second transistor wherein:   the first plurality of interconnect layers includes a plurality of first interconnect lines and a plurality of second interconnect lines,   the first plurality of insulation layers includes a first insulation layer and a second insulation layer, the first insulation layer between the first interconnect lines and having a uniform carbon concentration distribution, the second insulation layer adjacent to the second interconnect lines, and   a first air gap is between the second interconnect lines.   
     
     
         18 . The semiconductor device as claimed in  claim 17 , wherein the first transistor has a first channel length and the second transistor has a second channel length different from the first channel length and wherein the first structure is different from the second structure. 
     
     
         19 . The device as claimed in  claim 17 , wherein:
 the second plurality of interconnect layers includes a plurality of third interconnect lines and a plurality of fourth interconnect lines,   the second plurality of insulation layers includes a third insulation layer and a fourth insulation layer, the third insulation layer adjacent to the third interconnect lines and the fourth insulation layer adjacent to the fourth interconnect lines,   a second air gap is between the fourth interconnect lines.   
     
     
         20 . The semiconductor device as claimed in  claim 19 , further comprising:
 a third air gap is between the third interconnect lines.   
     
     
         21 . The device as claimed in  claim 17 , wherein:
 the first region includes a processor region, and   the second region includes a memory region.   
     
     
         22 - 27 . (canceled)