US2017211797A1PendingUtilityA1

Heat Discharge Structures for Light Source Devices and Light Source Systems

Assignee: NGK INSULATORS LTDPriority: Jan 26, 2016Filed: Jan 24, 2017Published: Jul 27, 2017
Est. expiryJan 26, 2036(~9.5 yrs left)· nominal 20-yr term from priority
H01S 5/02476H01S 5/02469F21V 29/70F21V 19/0015F21V 29/503H01S 5/32341F21V 29/85H10H 20/8582H01S 5/02345
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Claims

Abstract

It is provided a heat discharge structure for a light source device emitting a semiconductor laser. The structure fixes the light source device and discharges heat. The structure includes a film of a nitride of a group 13 element having a first main face, a second main face and an outer side end face. The structure further includes a portion for containing the light source device. The portion has a through hole opening at the first main face and the second main face, and a fixing face for fixing the light source device. The fixing face faces the through hole and contacts the light source device.

Claims

exact text as granted — not AI-modified
1 . A heat discharge structure for a light source device emitting a semiconductor laser, said structure fixing said light source device and discharging a heat, said structure comprising:
 a film of a nitride of a group 13 element, said film comprising a first main face, a second main face and an outer side end face;   a portion for containing said light source device, said portion comprising a through hole opening at said first main face and said second main face, and;   a fixing face for fixing said light source device, said fixing face facing said through hole and contacting said light source device.   
     
     
         2 . The structure of  claim 1 , comprising a plurality of said fixing faces for fixing said light source device. 
     
     
         3 . The structure of  claim 2 , wherein said fixing faces for fixing said light source device are opposed to each other across said through hole. 
     
     
         4 . The structure of  claim 1 , wherein said nitride of said group 13 element comprises GaN. 
     
     
         5 . The structure of  claim 1 , wherein said nitride of said group 13 element comprises zinc doped therein. 
     
     
         6 . The structure of  claim 1 , further comprising an electrode for said light source device. 
     
     
         7 . The structure of  claim 6 , comprising a pair of said electrodes provided on said first main face and being opposed to each other across said through hole on said first main face. 
     
     
         8 . The structure of  claim 6 , further comprising an outer side electrode provided on said outer side end face. 
     
     
         9 . A light source system comprising said structure of  claim 1  and said light source device contained in said portion for containing said light source device and fixed on said fixing face. 
     
     
         10 . The system of  claim 9 , wherein said structure comprises a plurality of said fixing faces for fixing said light source device, and wherein said light source device contacts each of said fixing faces.

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