US2017208685A1PendingUtilityA1
Thermoplastic composition
Assignee: MITSUBISHI CHEMICAL EUROPE GMBHPriority: Mar 16, 2012Filed: Apr 3, 2017Published: Jul 20, 2017
Est. expiryMar 16, 2032(~5.6 yrs left)· nominal 20-yr term from priority
Inventors:Bernardus Antonius Gerardus Schrauwen
C08K 3/22C23C 18/1608H05K 3/105H05K 1/0373H05K 2201/0129C23C 18/1612H05K 2203/107H01Q 1/36H05K 2201/0215C08K 3/2279C08K 2003/2241C23C 18/1646C23C 18/204H05K 3/0014C23C 18/38C23C 18/1641H05K 2201/09118H05K 3/181C08K 2003/2231
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Claims
Abstract
A thermoplastic composition including a) a thermoplastic resin and b) a laser direct structuring (LDS) additive in an amount of at least 1 wt. % with respect to the weight of the total composition, wherein the LDS additive includes a mixed metal oxide including at least tin and a second metal selected from the group consisting of antimony, bismuth, aluminium and molybdenum, wherein the LDS additive includes at least 40 wt. % of tin and wherein the weight ratio of the second metal to tin is at least 0.02:1.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A process for producing a circuit carrier, comprising the steps of:
providing a moulded part that contains a thermoplastic composition comprising: a) a thermoplastic resin and b) a laser direct structuring (LDS) additive in an amount of at least 1 wt % with respect to the weight of the total composition, wherein the LDS additive comprises a mixed metal oxide comprising at least tin and a second metal that is antimony, bismuth, aluminum or molybdenum, wherein the LDS additive comprises at least 40 wt % of tin and wherein the weight ratio of the second metal to tin is at least 0.02:1; irradiating areas of said part on which conductive tracks are to be formed with laser radiation; and subsequently metalizing the irradiated areas.
2 . The process according to claim 1 , wherein the weight ratio of the second metal to tin is at least 0.03:1.
3 . The process according to claim 1 , wherein the thermoplastic composition comprises the thermoplastic resin in an amount of 65 wt % and 99 wt %, with respect to the weight of the total composition.
4 . The process according to claim 1 , wherein the LDS additive has a particle size D90 of at most 10 μm as determined by light scattering technology according to ISO 13320-1:1999.
5 . The process according to claim 1 , wherein the weight ratio of the second metal to tin is at most 0.2:1.
6 . The process according to claim 1 , wherein the weight ratio of the second metal to tin is at most 0.05:1.
7 . The process according to claim 1 , wherein the thermoplastic resin has an electrical dissipation factor of at most 0.009 at 2 GHz, as measured according to ASTM D-2520, Method B.
8 . The process according to claim 1 , wherein the mixed metal oxide comprises at least 60 wt % of the total weight of tin and the second metal with respect to the total weight of the metals present in the mixed metal oxide.
9 . The process according to claim 1 , wherein the mixed metal oxide is antimony tin oxide.
10 . The process according to claim 1 , wherein the LDS additive comprises at least 50 wt % of the mixed metal oxide with respect to the total weight of the LDS additive.
11 . The process according to claim 1 , wherein the thermoplastic resin is a polycarbonate-based resin.
12 . The process according to claim 1 , wherein the thermoplastic composition comprises the thermoplastic resin in an amount of between 45 wt % and 99 wt, with respect to the weight of the total composition.
13 . The process according to claim 1 , wherein the thermoplastic composition comprises the thermoplastic resin in an amount of 70 wt % and 97 wt %, with respect to the weight of the total composition.
14 . The process according to claim 1 , wherein the thermoplastic composition comprises the laser direct structuring additive in an amount of between 2 wt % and 25 wt %, with respect to the weight of the total composition.
15 . The process according to claim 1 , wherein the thermoplastic composition comprises the laser direct structuring additive in an amount of between 5 wt % and 10 wt %, with respect to the weight of the total composition.
16 . The process according to claim 1 , wherein the amount of antimony in the thermoplastic composition is less than 700 ppm and the thermoplastic composition comprises at least 10 wt % of TiO 2 .
17 . The circuit carrier obtained by the process according to claim 1 .
18 . An antenna comprising the circuit carrier according to claim 17 .Join the waitlist — get patent alerts
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