Dielectric layer, display substrate comprising the dielectric layer, and method for manufacturing the display substrate

Abstract

A dielectric layer applicable to a display substrate, comprises at least one metal grain layer which is disposed therein. A display substrate comprising the dielectric layer, and a method for manufacturing such a display substrate are further disclosed.

1 . A dielectric layer applicable to a display substrate, comprising at least one metal grain layer which is disposed in the dielectric layer. 
     
     
         2 . The dielectric layer according to  claim 1 , further comprising a plurality of metal grain layers and a plurality of dielectric sub-layers, wherein the plurality of metal grain layers and the plurality of dielectric sub-layers are disposed alternately, and each of the metal grain layers is sandwiched between adjacent two dielectric sub-layers. 
     
     
         3 . The dielectric layer according to  claim 1 , wherein the plurality of dielectric sub-layers are made of at least one of silicon oxide or silicon nitride. 
     
     
         4 . The dielectric layer according to  claim 1 , wherein each of the plurality of dielectric sub-layers has a thickness of 2 nm to 10 nm. 
     
     
         5 . The dielectric layer according to  claim 1 , wherein the metal grain layer is made of at least one of Au, Ag or Al, or combination thereof. 
     
     
         6 . The dielectric layer according to  claim 1 , wherein metal grains in the metal grain layer has a size of 1 nm to 4 nm. 
     
     
         7 . The dielectric layer according to  claim 1 , wherein metal grains in the metal grain layer has a shape of sphere, cylinder, cuboid, cube, cage, or core-shell. 
     
     
         8 . A display substrate, comprising the dielectric layer according to  claim 1 , and further comprising a substrate and an OLED device, a light emitting surface of the OLED device facing the substrate, wherein the dielectric layer is disposed between the substrate and the OLED device. 
     
     
         9 . The display substrate according to  claim 8 , further comprising a driving transistor, wherein the driving transistor is disposed over the dielectric layer, and a drain electrode of the driving transistor is electrically connected to the OLED device. 
     
     
         10 . The display substrate according to  claim 8 , further comprising a package cover plate, which is disposed at a side of the OLED device away from the light emitting surface. 
     
     
         11 . A display substrate, comprising the dielectric layer according to  claim 1 , and further comprising a substrate, an OLED device and a package cover plate, wherein the OLED device is disposed between the substrate and the package cover plate, a light emitting surface of the OLED device faces the package cover plate, and the dielectric layer is disposed between the OLED device and the package cover plate. 
     
     
         12 . The display substrate according to  claim 11 , wherein the display substrate further comprises a driving transistor is disposed over the dielectric layer, and a drain electrode of the driving transistor is electrically connected to the OLED device. 
     
     
         13 . A method for manufacturing the display substrate according to  claim 8 , which comprising:
 forming a dielectric layer and forming at least one metal grain layer in the dielectric layer.   
     
     
         14 . The method according to  claim 13 , wherein the display substrate comprises a plurality of metal grain layers and the dielectric layer comprises a plurality of dielectric sub-layers, and the plurality of metal grain layers and the plurality of dielectric sub-layers are disposed alternately in a direction perpendicular to the base;
 forming a dielectric layer and forming at least one metal grain layer in the dielectric layer comprising:   forming a plurality of metal material layers and a plurality of dielectric sub-layers on the base which are disposed alternately;   forming a dielectric sub-layer on the base on which the plurality of metal material layers and the plurality of dielectric sub-layers are formed; and   annealing the display substrate, so as to make metal atoms in the metal material layer cluster into metal grains and form the metal grain layers.   
     
     
         15 . The method according to  claim 13 , wherein the annealing is performed at a temperature of 300° C. to 500° C. for 5 minutes to 30 minutes. 
     
     
         16 . A method for manufacturing an OLED display panel, comprising the method according to  claim 12 .