Display and electronic unit

Abstract

A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.

The application is claimed as follows: 
     
         1 . A method of manufacturing a display device including a display element, a transistor configured to drive the display element, and a retention capacitor, the method comprising:
 forming an oxide semiconductor film in areas across the transistor and the retention capacitor, the oxide semiconductor film including
 a first region formed in a channel region of the transistor, and 
 a second region having a lower resistance than that of the first region, the second region formed in the areas of the transistor and retention capacitor other than in the channel region. 
   
     
     
         2 . The method according to  claim 1 , further comprising forming a high-resistance film and an interlayer insulating film that cover the oxide semiconductor film in the first region and the second region. 
     
     
         3 . The method according to  claim 1 , wherein the oxide semiconductor film is formed of an oxide semiconductor containing one or more of indium (In), gallium (Ga), zinc (Zn), silicon (Si), and tin (Sn). 
     
     
         4 . The method according to  claim 1 , wherein the oxide semiconductor film includes at least one of:
 (a) an amorphous semiconductor selected from the group consisting of indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO or InGaZnO); and   (b) a crystalline oxide semiconductor selected from the group consisting of zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), ITO, and indium oxide (InO).   
     
     
         5 . The method according to  claim 1 , wherein forming the oxide semiconductor film includes:
 forming the entire oxide semiconductor film of the same base materials to form first and second regions of the oxide semiconductor film; and   modifying the second region by reacting and diffusing a metal into an upper surface of the oxide semiconductor film to thereby form the second region having a lower resistance than the first region.   
     
     
         6 . The method according to  claim 1 , wherein the second region includes regions corresponding to an electrode of the retention capacitor, and source and drain regions in the transistor.