Semiconductor device

Abstract

An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating substrate on which a conductive pattern is formed, and an electrode terminal and a semiconductor element which are bonded to the conductive pattern, the electrode terminal and the conductive pattern are bonded by ultrasonic bonding on a bonding face, and the ultrasonic bonding is performed at a plurality of positions.

1 . A semiconductor device comprising:
 an insulating substrate on which a conductive pattern is formed; and   an electrode terminal and a semiconductor element that are bonded to the conductive pattern,   wherein   the electrode terminal and the conductive pattern are bonded together by ultrasonic bonding through at least one bonding face, and   the ultrasonic bonding is performed at a plurality of positions.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 the at least one bonding face is one bonding face, and   the ultrasonic bonding is performed at a plurality of positions on the one bonding face.   
     
     
         3 . The semiconductor device according to  claim 1 , wherein
 the at least one bonding face is a plurality of bonding faces,   a root of the electrode terminal is divided,   the divided root forms the plurality of bonding faces, and   each of the plurality of bonding faces includes at least one position subjected to the ultrasonic bonding.   
     
     
         4 . The semiconductor device according to  claim 3 , wherein
 the electrode terminal is a flat plate, and   the root of the electrode terminal is divided in the thickness direction or in the width direction.   
     
     
         5 . The semiconductor device according to  claim 3 , wherein
 the root of the electrode terminal is divided into two, three, or four branches.   
     
     
         6 . The semiconductor device according to  claim 4 , wherein
 the root of the electrode terminal is divided into two, three, or four branches.   
     
     
         7 . The semiconductor device according to  claim 3 , wherein
 branch parts at the root of the electrode terminal are angled such that the branch parts go away from each other in a plan view with respect to the bonding faces.   
     
     
         8 . The semiconductor device according to  claim 4 , wherein
 branch parts at the root of the electrode terminal are angled such that the branch parts go away from each other in a plan view with respect to the bonding faces.   
     
     
         9 . The semiconductor device according to  claim 2 , wherein
 with respect to the plurality of positions on the bonding face subjected to the ultrasonic bonding, vibration directions of the ultrasonic bonding are different from each other.   
     
     
         10 . The semiconductor device according to  claim 1 , wherein
 the ultrasonic bonding is performed a plurality of times in such a manner that the positions on the bonding face subjected to the ultrasonic bonding are overlapped with each other in a plan view.   
     
     
         11 . A semiconductor device comprising:
 an insulating substrate on which a conductive pattern is formed; and   an electrode terminal and a semiconductor element that are bonded to the conductive pattern, wherein   the electrode terminal and the conductive pattern are bonded together by ultrasonic bonding through at least one bonding face,   the electrode terminal includes a projection and the conductive pattern includes a depression on the bonding face, or the electrode terminal includes a depression and the conductive pattern includes a projection on the bonding face, and   the projection and the depression are engaged with each other.   
     
     
         12 . The semiconductor device according to  claim 11 , wherein
 the projection and the depression are overlap with the position subjected to the ultrasonic bonding in a plan view.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein
 the ultrasonic bonding is performed at a plurality of positions.