Resist fortification for magnetic media patterning

Abstract

A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

What is claimed is: 
     
         1 . A method of forming a magnetic media substrate comprising:
 forming a magnetically active layer on a structural substrate;   forming a patterned resist having thick portions and thin portions in contact with the magnetically active layer;   forming a conformal stabilizing layer over the patterned resist;   exposing portions of the magnetically active surface to directed energy through the stabilizing layer and the thin portions of the patterned resist;   modifying a magnetic property of the exposed portions of the magnetically active surface to form a patterned magnetic substrate; and   removing the patterned resist and the stabilizing layer.   
     
     
         2 . The method of  claim 1 , wherein the forming the patterned resist comprises a physical patterning process. 
     
     
         3 . The method of  claim 1 , wherein conformal stabilizing layer is a silicon containing layer. 
     
     
         4 . The method of  claim 2 , wherein the physical patterning process is a nano-imprint process. 
     
     
         5 . The method of  claim 1 , wherein exposing portions of the magnetically active surface to directed energy through the stabilizing layer and the thin portions comprises:
 generating a fluorine containing ion beam; and   directing the fluorine containing ion beam toward the substrate, wherein the ions have an average kinetic energy selected to penetrate the thin portions of the resist but not the thick portions of the resist.   
     
     
         6 . The method of  claim 1 , wherein removing the stabilizing layer and the patterned resist comprises exposing the substrate to a fluorine containing gas. 
     
     
         7 . The method of  claim 1 , wherein forming a conformal stabilizing layer comprises depositing a silicon containing layer over the patterned resist at a temperature below about 150° C. 
     
     
         8 . A method of treating a magnetic media substrate comprising:
 forming a magnetically active layer on a structural substrate;   forming a patterned resist having thick portions and thin portions in contact with the magnetically active layer;   forming a silicon containing conformal stabilizing layer over the patterned resist;   exposing portions of the magnetically active surface to directed energy through the stabilizing layer and the thin portions of the patterned resist; and   modifying a magnetic property of the exposed portions of the magnetically active surface to form a patterned magnetic substrate.   
     
     
         9 . The method of  claim 8 , wherein the forming the patterned resist comprises a physical patterning process. 
     
     
         10 . The method of  claim 8 , further comprising removing the patterned resist and the stabilizing layer. 
     
     
         11 . The method of  claim 9 , wherein the physical patterning process is a nano-imprint process. 
     
     
         12 . The method of  claim 8 , wherein exposing portions of the magnetically active surface to directed energy through the stabilizing layer and the thin portions comprises:
 generating a fluorine containing ion beam; and   directing the fluorine containing ion beam toward the substrate, wherein the ions have an average kinetic energy selected to penetrate the thin portions of the resist but not the thick portions of the resist.   
     
     
         13 . The method of  claim 10 , wherein removing the stabilizing layer and the patterned resist comprises exposing the substrate to a fluorine containing gas. 
     
     
         14 . The method of  claim 8 , wherein forming a silicon containing conformal stabilizing layer comprises depositing the silicon containing conformal stabilizing layer over the patterned resist at a temperature below about 150° C. 
     
     
         15 . The method of  claim 8 , wherein the silicon containing conformal stabilizing layer comprises silicon oxide, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or SiOCN.