Thin film of metal oxide, organic electroluminescent device including thin film, photovoltaic cell including thin film, and manufacturing method of thin film

Abstract

A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO 2 is greater than 15 mol % but less than or equal to 95 mol %.

What is claimed is: 
     
         1 . A thin film of metal oxide, comprising:
 zinc (Zn);   tin (Sn);   silicon (Si); and   oxygen (O),   wherein in terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO 2  is greater than 15 mol % but less than or equal to 95 mol %.   
     
     
         2 . The thin film according to  claim 1 ,
 wherein in terms of oxide, based on 100 mol % of total of the oxides of the thin film, SiO 2  is greater than or equal to 7 mol % but less than or equal to 30 mol %.   
     
     
         3 . The thin film according to  claim 1 ,
 wherein a thickness of the thin film is greater than or equal to 10 nm but less than or equal to 2000 nm.   
     
     
         4 . An organic electroluminescent device including a thin film,
 wherein the thin film is a thin film of metal oxide including zinc (Zn), tin (Sn), and oxygen (O), and   wherein in terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO 2  is greater than 15 mol % but less than or equal to 95 mol %.   
     
     
         5 . The organic electroluminescent device according to  claim 4 ,
 wherein the thin film includes silicon (Si).   
     
     
         6 . The organic electroluminescent device according to  claim 5 ,
 wherein in terms of oxide, based on 100 mol % of total of the oxides of the thin film, SiO 2  of the thin film is greater than or equal to 7 mol % but less than or equal to 30 mol %.   
     
     
         7 . The organic electroluminescent device according to  claim 4 ,
 wherein the thin film does not substantially include silicon (Si).   
     
     
         8 . The organic electroluminescent device according to  claim 4 ,
 wherein a thickness of the thin film is greater than or equal to 10 nm but less than or equal to 2000 nm.   
     
     
         9 . A photovoltaic cell including a thin film,
 wherein the thin film is a thin film of metal oxide including zinc (Zn), tin (Sn), and oxygen (O), and   wherein in terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO 2  is greater than 15 mol % but less than or equal to 95 mol %.   
     
     
         10 . The photovoltaic cell according to  claim 9 ,
 wherein the thin film includes silicon (Si).   
     
     
         11 . The photovoltaic cell according to  claim 10 ,
 wherein in terms of oxide, based on 100 mol % of total of the oxides of the thin film, SiO 2  of the thin film is greater than or equal to 7 mol % but less than or equal to 30 mol %.   
     
     
         12 . The photovoltaic cell according to  claim 9 ,
 wherein the thin film does not substantially include silicon (Si).   
     
     
         13 . The photovoltaic cell according to  claim 9 ,
 wherein a thickness of the thin film is greater than or equal to 10 nm but less than or equal to 2000 nm.   
     
     
         14 . A manufacturing method of the thin film according to  claim 1 , comprising:
 before forming the thin film in a chamber by a sputtering method, reducing a pressure in the chamber to 8.0×10 −4  Pa or less;   introducing a sputtering gas into the chamber; and   setting the pressure in the chamber to 0.1 Pa or more but 5.0 Pa or less, to perform deposition of the thin film.   
     
     
         15 . The manufacturing method of the thin film according to  claim 14 ,
 wherein a target used in the sputtering method includes Zn, Sn, and Si,   wherein an atomic fraction of Silicon atoms as defined by Si/(Zn+Sn+Si) in the target is greater than or equal to 0.01 but less than or equal to 0.70.