Semiconductor Chip and Method for Manufacturing the Same

Abstract

A first transistor has a gate electrode formed by a substantially linear portion of a first conductive structure. A second transistor has a gate electrode formed by a substantially linear portion of a second conductive structure. A third transistor has a gate electrode formed by a substantially linear portion of a third conductive structure. A fourth transistor has a gate electrode formed by a substantially linear portion of a fourth conductive structure. The substantially linear portions of the first, second, third, and fourth conductive structures extend in a first direction and are positioned in accordance with a gate pitch. Gate electrodes of the first and second transistors have a first size as measured in the first direction. Gate electrodes of the third and fourth transistors have a second size as measured in the first direction. The first size is at least two times the second size.

What is claimed is: 
     
         1 . A semiconductor chip, comprising:
 at least twenty-five gate conductive structure tracks, each gate conductive structure track extending along a respective line oriented in a first reference direction, the first reference direction oriented substantially parallel to an underlying substrate of the semiconductor chip,   each gate conductive structure track including at least one gate conductive structure, wherein any two gate conductive structures positioned next to each other on a same gate conductive structure track are separated from each other by a distance of less than 193 nanometers as measured in the first reference direction,   each gate conductive structure track spaced apart from a neighboring gate conductive structure track by a distance of less than 193 nanometers as measured in a second reference direction perpendicular to the first reference direction, the second reference direction oriented substantially parallel to the underlying substrate of the semiconductor chip,   each gate conductive structure within the region having a substantially rectangular shape when viewed from a location above the semiconductor chip, the substantially rectangular shape of each gate conductive structure within the region defined by a respective length as measured in the first reference direction and a respective width as measured in the second reference direction, the width of each gate conductive structure within the region being less than or substantially equal to 45 nanometers,   each gate conductive structure within the region having a substantially co-planar top surface,   each gate conductive structure having a lengthwise centerline extending in the first reference direction through a midpoint of its width, the lengthwise centerline of each gate conductive structure positioned on the line along which its gate conductive structure track extends.