Semiconductor structure

Abstract

A semiconductor structure includes a dielectric layer located on a substrate, wherein the dielectric layer includes nitrogen atoms, and the concentration of the nitrogen atoms in the dielectric layer is lower than 5% at a location wherein the distance between this location in the dielectric layer to the substrate is less than 20% of the thickness of the dielectric layer. Moreover, the present invention provides a semiconductor process including the following steps: a dielectric layer is formed on a substrate. Two annealing processes are performed in-situly on the dielectric layer, wherein the two annealing processes have different imported gases and different annealing temperatures.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a dielectric layer located on a substrate, wherein the dielectric layer comprises nitrogen atoms, and the concentration of the nitrogen atoms in the dielectric layer is lower than 5% at a location, wherein the distance between the location in the dielectric layer to the substrate is less than 20% of the thickness of the dielectric layer.   
     
     
         2 . The semiconductor structure according to  claim 1 , wherein the dielectric layer comprises a silicon oxide layer, a silicon oxynitride layer or a hafnium oxide layer. 
     
     
         3 . The semiconductor structure according to  claim 1 , wherein the dielectric layer comprises a gate dielectric layer, a buffer layer or a dielectric layer having high dielectric constant.