US2017184889A1PendingUtilityA1

Display device

Assignee: SAMSUNG DISPLAY CO LTDPriority: Feb 12, 2014Filed: Mar 10, 2017Published: Jun 29, 2017
Est. expiryFeb 12, 2034(~7.6 yrs left)· nominal 20-yr term from priority
G02F 1/134309G02F 1/133345G02F 1/13439G02F 2201/121G02F 2201/123G02F 2201/56G02F 1/1368G02F 1/1341G02F 1/133377
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Claims

Abstract

Provided is a display device, including a substrate including pixel areas which are disposed in a matrix form including pixel rows and pixel columns, a thin film transistor formed on the substrate, a pixel electrode connected to the thin film transistor, a common electrode formed on the pixel electrode to be spaced apart from the pixel electrode with a microcavity therebetween, a liquid crystal layer filling the microcavity between the pixel electrode and the common electrode, a roof layer formed on the common electrode, a liquid crystal injection hole formed in the common electrode and the roof layer to expose a part of the microcavity, and an overcoat formed on the roof layer so as to cover the liquid crystal injection hole to seal the microcavity. A cross section of the microcavity has a reverse-tapered trapezoidal shape in which an upper width is larger than a lower width.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A manufacturing method of a display device, comprising:
 forming a thin film transistor on a substrate;   forming a first insulating layer on the thin film transistor;   forming a pixel electrode connected with the thin film transistor on the first insulating layer;   forming a trapezoid pattern between adjacent pixel electrodes;   forming a reverse-tapered trapezoidal sacrificial layer filling a space between the patterns on the pixel electrode;   removing the trapezoid pattern;   forming a common electrode on the sacrificial layer;   forming a second insulating layer on the common electrode;   forming a roof layer by coating and patterning an organic material on the second insulating layer;   forming a microcavity between the pixel electrode and the common electrode by removing the sacrificial layer;   forming a liquid crystal layer by injecting a liquid crystal material into the microcavity; and   forming an overcoat on the roof layer to seal the microcavity.   
     
     
         2 . The manufacturing method of  claim 1 , wherein the trapezoid pattern is a positive photo-resist; and
 wherein the reverse-tapered trapezoidal sacrificial layer is a negative photo resist.   
     
     
         3 . The manufacturing method of  claim 2 , further comprising removing the sacrificial layer on the trapezoid pattern and exposing the trapezoid pattern and the reverse-tapered trapezoidal sacrificial layer before removing the trapezoid pattern. 
     
     
         4 . A display device, comprising:
 a substrate including a plurality of pixel areas which are disposed in a matrix form including a plurality of pixel rows and a plurality of pixel columns;   a thin film transistor formed on the substrate;   a pixel electrode connected to the thin film transistor and formed in the pixel area;   a common electrode formed on the pixel electrode to be spaced apart from the pixel electrode with a microcavity therebetween;   a roof layer formed on the common electrode;   a liquid crystal injection hole formed in the common electrode and the roof layer to expose a part of the microcavity;   a liquid crystal layer filling the microcavity; and   an overcoat formed on the roof layer so as to cover the liquid crystal injection hole to seal the microcavity,   wherein a cross section of the microcavity has a symmetrical semi-oval shape in a pixel disposed at the center of the substrate, a cross section of the microcavity of a pixel disposed at the right side of the substrate has an semi-oval shape in which a semi-major axis is inclined to the right, and a cross section of the microcavity of a pixel disposed at the left side of the substrate has an semi-oval shape in which a semi-major axis is inclined to the left.   
     
     
         5 . The display device of  claim 4 , wherein an inclination angle of the semi-major axis is gradually increased according to an increase in a distance from a center of the substrate. 
     
     
         6 . The display device of  claim 5 , wherein:
 the display device is a horizontally curved display.   
     
     
         7 . The display device of  claim 6 , wherein the cross section is a cross section along the pixel rows. 
     
     
         8 . A manufacturing method of a display device, comprising:
 forming a thin film transistor on a substrate;   forming a first insulating layer on the thin film transistor;   forming a pixel electrode connected with the thin film transistor on the first insulating layer;   coating a sacrificial layer on the pixel electrode;   positioning a mask having different transmittance for each area on the sacrificial layer;   exposing and etching the sacrificial layer;   forming a common electrode on the sacrificial layer;   forming a second insulating layer on the common electrode;   forming a roof layer by coating and patterning an organic material on the second insulating layer;   forming a microcavity between the pixel electrode and the common electrode by removing the sacrificial layer;   forming a liquid crystal layer by injecting a liquid crystal material into the microcavity; and   forming an overcoat on the roof layer to seal the microcavity.   
     
     
         9 . The manufacturing method of  claim 8 , wherein the mask corresponding to a center of the substrate has a same horizontal transmittance in a left and a right side of the semi-oval, and the mask except a region corresponding to the center of the substrate has a different horizontal transmittance in a left and a right side of the semi-oval. 
     
     
         10 . The manufacturing method of  claim 9 , wherein the mask is a halftone mask or a slit. 
     
     
         11 . The manufacturing method of  claim 9 , wherein the sacrificial layer is a negative photosensitive material, the mask corresponding to the left side of the substrate has higher transmittance in the left side of the semi-oval than the right side of the semi-oval, and the mask corresponding to the right side of the substrate has higher transmittance in the right side of the semi-oval than the left side of the semi-oval. 
     
     
         12 . A display device, comprising:
 a substrate including a plurality of pixel areas which are disposed in a matrix form including a plurality of pixel rows and a plurality of pixel columns;   a thin film transistor formed on the substrate;   a pixel electrode connected to the thin film transistor and formed in the pixel area;   a common electrode formed on the pixel electrode to be spaced apart from the pixel electrode with a microcavity therebetween;   a roof layer formed on the common electrode;   a liquid crystal injection hole formed in the common electrode and the roof layer to expose a part of the microcavity;   a liquid crystal layer filling the microcavity; and   an overcoat formed on the roof layer so as to cover the liquid crystal injection hole to seal the microcavity,   wherein a horizontal width of the microcavity is gradually decreased according to an increase in a distance from a center of a display panel.   
     
     
         13 . The display device of  claim 12 , wherein the display device is a horizontally curved display. 
     
     
         14 . The display device of  claim 12 , wherein a cross section in a pixel row direction of the microcavity has a trapezoidal shape in which an upper width is smaller than a lower width. 
     
     
         15 . A manufacturing method of a display device, comprising:
 forming a thin film transistor on a substrate;   forming a first insulating layer on the thin film transistor;   forming a pixel electrode connected with the thin film transistor on the first insulating layer;   coating a sacrificial layer on the pixel electrode;   positioning a mask including light blocking regions, a width of the light blocking regions being gradually varying according to an increase in a distance from a center of the substrate;   exposing and developing the sacrificial layer;   forming a common electrode on the sacrificial layer;   forming a second insulating layer on the common electrode;   forming a roof layer by coating and patterning an organic material on the second insulating layer;   forming a microcavity between the pixel electrode and the common electrode by removing the sacrificial layer;   forming a liquid crystal layer by injecting a liquid crystal material into the microcavity; and   forming an overcoat on the roof layer to seal the microcavity.   
     
     
         16 . The manufacturing method of  claim 15 , wherein the sacrificial layer is a positive photosensitive material, and the width of the light blocking regions is gradually decreased according to an increase in a distance from a center of a display panel.

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