Aln crystal preparation method, aln crystals, and organic compound including aln crystals

Abstract

An AlN crystal preparation method includes using at least one element excluding Si that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN. In the preparation method, a composition including at least Al and the element is melted. Al vapor and nitrogen gas are reacted at a prescribed reaction temperature. AlN crystals are formed.

1 . A method for producing AlN crystals, comprising:
 using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N at a predetermined reaction temperature or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN;   melting a composition containing at least Al and the element; and   reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce whiskers consisting of AlN crystals from the alloy containing at least Al and the element.   
     
     
         2 . The method for producing AlN crystals according to  claim 1 , wherein
 the element used is any of Li, Mg, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Sr and Sn.   
     
     
         3 . The method for producing AlN crystals according to  claim 1 , wherein
 the element used is an element that satisfies a condition under which the interaction energy with Al becomes negative and also satisfies a condition under which the absolute value of this interaction energy is larger than the interaction energy between Al and Ge.   
     
     
         4 . The method for producing AlN crystals according to  claim 3 , wherein
 the element used is any of Li, Cr, Fe, Co, Ni, Cu and Sr.   
     
     
         5 .- 9 . (canceled) 
     
     
         10 . AlN crystals, wherein the crystals are whiskers, and
 the difference between a projection and a depression on the surface is smaller than 10 nm at a maximum.   
     
     
         11 .- 12 . (canceled) 
     
     
         13 . An organic compound comprising AlN crystals, wherein the organic compound is constituted by mixing therein crystals according to  claim 10 . 
     
     
         14 . An electric wire obtained using an organic compound comprising AlN crystals according to  claim 13  as at least any of a thermally conductive member and an insulating member. 
     
     
         15 . A light bulb obtained using an organic compound comprising AlN crystals according to  claim 13  as at least any of a thermally conductive member and an insulating member. 
     
     
         16 . A motor obtained using an organic compound comprising AlN crystals according to  claim 13  as at least any of a thermally conductive member and an insulating member. 
     
     
         17 . An electronic component obtained using an organic compound comprising AlN crystals according to  claim 13  as at least any of a thermally conductive member and an insulating member. 
     
     
         18 . A printed circuit board obtained using an organic compound comprising AlN crystals according to  claim 13  as at least any of a thermally conductive member and an insulating member. 
     
     
         19 . A sheet obtained using an organic compound comprising AlN crystals according to  claim 13  as at least any of a thermally conductive member and an insulating member. 
     
     
         20 . Paper obtained using an organic compound comprising AlN crystals according to  claim 13  as at least any of a thermally conductive member and an insulating member. 
     
     
         21 . A fiber obtained using an organic compound comprising AlN crystals according to  claim 13  as at least any of a thermally conductive member and an insulating member. 
     
     
         22 . An AlN crystal production apparatus, comprising:
 a core tube; and   a unit for heating, wherein the production is carried out by using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N at a predetermined reaction temperature or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element by heating with the unit for heating in the inside of the core tube; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce whiskers consisting of AlN crystals from the alloy containing at least Al and the element.