Package with dielectric or anisotropic conductive (acf) buildup layer

Abstract

Embodiments of the present disclosure are directed to techniques and configurations for an integrated circuit (IC) package having one or more dies connected to an integrated circuit substrate by an interface layer. In one embodiment, the interface layer may include an anisotropic portion configured to conduct electrical signals in the out-of-plane direction between one or more components, such as a die and an integrated circuit substrate. In another embodiment, the interface layer may be a dielectric or electrically insulating layer. In yet another embodiment, the interface layer may include an anisotropic portion that serves as an interconnect between two components, a dielectric or insulating portion, and one or more interconnect structures that are surrounded by the dielectric or insulating portion and serve as interconnects between the same or other components. Other embodiments may be described and/or claimed.

1 . (canceled) 
     
     
         2 . A system to couple a first component for a semiconductor package to a second component for the semiconductor package, comprising:
 a first support to couple to the first component;   a second support to:   couple to the second component; and   exert a force on the second component, wherein the force causes the second component to be pressed against the first component; and   a heat element to apply heat to at least one of the first component and the second component while the force is exerted on the second component, wherein the first component and the second component are to become bonded.   
     
     
         3 . The system of  claim 2 , wherein at least part of the second support is porous. 
     
     
         4 . The system of  claim 3 , further comprising a chucking system, the chucking system to apply a vacuum to the second support to produce the vacuum pressure. 
     
     
         5 . The system of  claim 2 , wherein the second support includes a chuck. 
     
     
         6 . The system of  claim 2 , wherein the first support and the second support are to align the first component and the second component. 
     
     
         7 . The system of  claim 2 , wherein the first support is to couple to the first component via vacuum pressure, and wherein the second support is to couple to the second component via vacuum pressure. 
     
     
         8 . The system of  claim 2 , wherein the first component and the second component are bonded via the force and the heat. 
     
     
         9 . The system of  claim 2 , wherein the second component comprises a die. 
     
     
         10 . The system of  claim 2 , wherein the first component and the second component comprise semiconductor components. 
     
     
         11 . The system of  claim 2 , wherein:
 the first support is further to decouple from the first component after the second component is bonded to the first component; and   the second support is further to decouple from the second component after the second component is bonded to the first component.   
     
     
         12 . A method of coupling a first component for a semiconductor package to a second component for the semiconductor package, comprising:
 coupling the first component to a first support;   coupling the second component to a second support;   exerting a force on the second component causing the second component to be pressed against the first component; and   applying heat to at least one of the first component and the second component while exerting the force on the second component, wherein the first component and the second component are to become bonded.   
     
     
         13 . The method of  claim 12 , further comprising inverting the second support, wherein the force is exerted on the second component while the second support is inverted. 
     
     
         14 . The method of  claim 12 , further comprising:
 removing the force after a predetermined period of time; and   halting application of the heat after the predetermined period of time.   
     
     
         15 . The method of  claim 14 , wherein the predetermined period of time is at least 100 seconds. 
     
     
         16 . The method of  12 , further comprising aligning the first component with the second component, the first component and the second component being aligned while exerting the force on the second component. 
     
     
         17 . The method of  claim 12 , wherein the force is between 0.01 atmospheres and 11 atmospheres. 
     
     
         18 . The method of  claim 12 , wherein coupling the first component to the first support includes applying vacuum pressure to the first component, and wherein coupling the second component to the second support includes applying vacuum pressure to the second component. 
     
     
         19 . The method of  claim 12 , wherein the first component and the second component become bonded in response to exerting the force and applying the heat. 
     
     
         20 . The method of  claim 12 , further comprising electrically coupling an interface structure of the second component with a portion of the first component. 
     
     
         21 . The method of  claim 20 , wherein the interface structure is electrically coupled with the portion of the first component when the first component and the second component are bonded.