US2017170341A1PendingUtilityA1

Integrated circuit device

Assignee: INVENSAS CORPPriority: Feb 6, 1998Filed: Dec 22, 2016Published: Jun 15, 2017
Est. expiryFeb 6, 2018(expired)· nominal 20-yr term from priority
Inventors:Avner Badehi
H10P 72/7416H10W 90/00H10W 72/29H10W 74/129H10W 74/01H10W 72/0198H10W 72/90H10W 70/093H10W 70/60H01L 33/483H01L 31/0203H01L 31/02327H01L 31/125H01L 33/44H01L 21/56H01L 31/186H01L 21/82H01L 31/02002H01L 33/56H01L 2221/68327H01L 31/02164H01L 33/0095H10H 20/854H10H 20/852H10H 20/8506H10H 20/84H10H 20/01H10F 71/00H10F 55/18H10F 77/413H10F 77/334H10F 77/50H10F 77/93H10D 84/01H10H 20/857H10H 29/10H10F 39/804H10F 39/026
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Claims

Abstract

An integrally packaged optronic integrated circuit device including an integrated circuit die containing at least one of a radiation emitter and radiation receiver and having a transparent packaging layer overlying a surface of the die, the transparent packaging layer having an opaque coating adjacent to edges of the layer.

Claims

exact text as granted — not AI-modified
1 . A method of producing packaged optronic integrated circuit devices comprising:
 (a) providing a transparent protective layer overlying a first surface of a semiconductor wafer including a plurality of dies;   (b) forming notches extending into the wafer from a second surface of the wafer, the notches being disposed at dice lanes between the dies;   (c) providing an insulating layer overlying the second surface of the wafer and having an outer surface facing away from the wafer;   (d) forming contacts electrically connected to the dies, the contacts extending onto the outer surface of the insulating layer; and then   (e) severing the transparent protective layer to separate the dies from one another.   
     
     
         2 . A method as claimed in  claim 1 , wherein the step of forming the notches is performed so that the notches extend entirely through the wafer. 
     
     
         3 . A method as claimed in  claim 2 , wherein the step of forming the notches is performed so that the notches extend into the transparent protective layer. 
     
     
         4 . A method according to  claim 1 , further comprising associating at least one spectral filter with the transparent protective layer. 
     
     
         5 . A method as claimed in  claim 1 , wherein the wafer includes pads, and wherein the step of forming the notches exposes the pads within the notches. 
     
     
         6 . A method as claimed in  claim 5 , wherein the step of forming solderable contacts includes connecting the contacts to the pads in the notches. 
     
     
         7 . A method as claimed in  claim 6 , wherein the step of forming the notches includes first forming channels extending into the wafer from the second surface and then removing material at the channels to form the notches. 
     
     
         8 . A method as claimed in  claim 7 , wherein the step of forming an insulating layer includes depositing a dielectric material in the channels, and wherein the step of removing material at the channels to form the notches is performed after depositing the dielectric material in the channels. 
     
     
         9 . A method as claimed in  claim 8 , wherein the step of providing an insulating layer includes depositing the dielectric material over the second surface of the wafer as well as in the channels. 
     
     
         10 . An integrally packaged optronic integrated circuit device including: an integrated circuit die containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mechanically protective material, at least one of the surfaces being transparent to radiation,
 said integrally packaged optronic integrated circuit device being characterized in that its longest dimension does not exceed the longest dimension of the die by more than 20%.   
     
     
         11 . An integrally packaged optronic integrated circuit device according to  claim 10 , and being characterized in that its longest dimension does not exceed the longest dimension of the die by more than 10%. 
     
     
         12 . An integrally packaged optronic integrated circuit device according to  claim 10 , and being characterized in that its longest dimension does not exceed the longest dimension of the die by more than 5%. 
     
     
         13 . An integrally packaged optronic integrated circuit device according to  claim 12 , and wherein said lenses are formed of the same material as that of the transparent protective surface. 
     
     
         14 . An integrally packaged optronic integrated circuit device according to  claim 13 , and wherein said lenses are not formed of the same material as that of the transparent protective surface. 
     
     
         15 . An integrally packaged optronic integrated circuit device according to any of  claims 13 , and wherein said lenses are formed on an outer facing surface of the transparent protective surface. 
     
     
         16 . An integrally packaged optronic integrated circuit device according to any of  claims 14 , and wherein said lenses are formed on an inner facing surface of the transparent protective surface. 
     
     
         17 . An integrally packaged optronic integrated circuit device according to  claim 16 , and wherein said circuit device is formed with an octagonal shape. 
     
     
         18 . A method for producing an integrally packaged optronic integrated circuit device comprising the steps of:
 forming electrical circuits onto a semiconductor wafer;   forming at least one transparent mechanical protective layer onto said semiconductor wafer over said electrical circuits;   forming solderable contacts onto said semiconductor wafer; and thereafter, dicing said wafer into individual packaged dies.

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