Semiconductor device structure with anti-acid layer and method for forming the same

Abstract

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.

1 . A complementary metal-oxide-semiconductor (CMOS) image sensor structure, comprising:
 a substrate having a frontside and a backside;   an interconnect structure formed over the frontside of the substrate;   an anti-acid layer formed over the interconnect structure;   a bonding layer formed over the anti-acid layer;   a plurality of pixel regions including a first photodetector corresponding to red light, a second photodetector corresponding to blue light and a third photodetector corresponding to green light formed over the backside of the substrate or over the bonding layer; and   a first microlens aligned with the first photodetector, a second microlens aligned with the second photodetector and interposing the first microlens and a third microlens, and the third microlens aligned with the third photodetector, wherein the first, second and third microlens are disposed on an opposite side of the respective first, second and third photodetector than the substrate, wherein the anti-acid layer contiguously extends over the substrate from above or below the first microlens to above or below the third microlens.   
     
     
         2 . The CMOS image sensor structure as claimed in  claim 1 , wherein the anti-acid layer comprises a metal nitride layer and a metal layer, and the metal nitride layer comprises a metal element that is the same as that of the metal layer, and wherein each of the metal layer and the metal nitride layer contiguously extend from above or below the first microlens to above or below the third microlens. 
     
     
         3 . The CMOS image sensor structure as claimed in  claim 1 , wherein the anti-acid layer has a thickness in a range from about 140 nm to about 250 nm. 
     
     
         4 . The CMOS image sensor structure as claimed in  claim 2 , wherein the metal nitride layer is tantalum nitride (TaN), and the metal layer is tantalum (Ta). 
     
     
         5 . The CMOS image sensor structure as claimed in  claim 4 , wherein the tantalum (Ta) is βphase tantalum (Ta). 
     
     
         6 . The CMOS image sensor structure as claimed in  claim 2 , wherein the metal nitride layer is titanium nitride (TiN), and the metal layer is titanium (Ti). 
     
     
         7 . The CMOS image sensor structure as claimed in  claim 1 , further comprising:
 a passivation layer formed over the bonding layer;   a first conductive bump structure formed in the passivation layer, wherein the conductive bump structure is electrically connected to the bonding layer; and   a second conductive bump structure formed in the passivation layer, wherein the anti-acid layer contiguously extends from under the first conductive bump structure to under the second conductive bump structure.   
     
     
         8 . The CMOS image sensor structure as claimed in  claim 1 , further comprising:
 a color filter layer of dye-based polymer over each of the plurality of pixel regions.   
     
     
         9 . A semiconductor device structure, comprising:
 an interconnect structure formed over a substrate, wherein the interconnect structure includes a top surface comprising a top inter-metal dielectric (IMD) layer and a top conductive line;   an anti-acid layer disposed over the top IMD layer and the top conductive layer; and   a bonding layer formed on the anti-acid layer and the passivation layer, wherein the anti-acid layer has a thickness that is greater than about 140 nm;   a first conductive bump structure formed over the bonding layer and a second conductive bump structure formed over the bonding layer, wherein the anti-acid layer having the thickness extends from below the first conductive bump structure to below the second conductive bump structure.   
     
     
         10 . The semiconductor device structure as claimed in  claim 9 , wherein the anti-acid layer is in direct contact with the planar top surface including directly contacting the top IMD layer and the top conductive layer of the interconnect structure. 
     
     
         11 . The semiconductor device structure as claimed in  claim 9 , wherein the anti-acid layer has a thickness in a range from about 140 nm to about 250 nm. 
     
     
         12 . The semiconductor device structure as claimed in  claim 9 , wherein the anti-acid layer comprises a metal nitride layer and a metal layer, and the metal nitride layer comprises a metal element which is the same as that of the metal layer. 
     
     
         13 . The semiconductor device structure as claimed in  claim 12 , wherein the metal nitride layer is tantalum nitride (TaN), and the metal layer is tantalum (Ta). 
     
     
         14 . The semiconductor device structure as claimed in  claim 13 , wherein the tantalum (Ta) is βphase tantalum (Ta). 
     
     
         15 . The semiconductor device structure as claimed in  claim 9 ,
 wherein the first conductive bump structure is electrically connected to the bonding layer.   
     
     
         16 .- 20 . (canceled) 
     
     
         21 . A complementary metal-oxide-semiconductor (CMOS) image sensor structure, comprising:
 a gate electrode layer formed over a first substrate;   an interconnect structure formed on the gate electrode layer;   an anti-acid layer formed on the interconnect structure, wherein the anti-acid layer completely covers a top surface of the interconnect structure;   a bonding layer formed on the anti-acid layer, wherein the bonding layer is made of conductive material;   a second substrate formed below the first substrate; and   a plurality of pixel regions each comprising a photodiode formed in the second substrate.   
     
     
         22 . The CMOS image sensor structure as claimed in  claim 21 , wherein the anti-acid layer comprises a metal nitride layer and the metal layer, and the metal nitride layer comprises a metal element that is the same as that of the metal layer. 
     
     
         23 . The CMOS image sensor structure as claimed in  claim 21 , further comprising:
 a color filter layer over the plurality of pixel regions; and   a plurality of microlens over the color filter layer, wherein each respective pixel of the plurality of pixel regions has a single microlens disposed under the respective pixel.   
     
     
         24 . The CMOS image sensor structure as claimed in  claim 21 , further comprising:
 a passivation layer formed over the bonding layer; and   a conductive bump structure formed in the passivation layer, wherein the conductive bump structure is electrically connected to the bonding layer.   
     
     
         25 . The CMOS image sensor structure as claimed in  claim 21 , wherein the metal nitride layer is tantalum nitride (TaN), the metal layer is tantalum (Ta), and the tantalum (Ta) is β phase tantalum (Ta).