Method of cutting fins to create diffusion breaks for finfets

Abstract

A method is provided for forming an integrated circuit with FinFETs. Initially, a fin is received with a dummy gate passing thereover. The dummy gate is removed to form a space over the fin. A temporary layer is subsequently placed in the space, and an element from the temporary layer is caused to pass into a portion of the fin to form a modified fin portion. After the temporary layer is removed, at least part of the modified fin portion is etched away to form a gap in the fin.

What is claimed is: 
     
         1 . An integrated circuit comprising:
 a gate;   a first fin portion ending in a first terminus; and   a second fin portion lined up with the first fin portion and ending in a second terminus;   wherein the first terminus and the second terminus are separated by about a width of the gate.   
     
     
         2 . The integrated circuit of  claim 1 , further comprising:
 a first sidewall spacer abutting the first terminus; and   a second sidewall spacer abutting the second terminus.