Substrate processing apparatus, substrate processing method and recording medium

Abstract

In a substrate processing apparatus 1 , a plating unit 4 includes a catalyst solution supply unit 43 a and a plating liquid supply unit 45 . By supplying, from the catalyst solution supply unit 43 a onto a substrate W 1 having an impurity-doped polysilicon film 90 containing a high concentration of impurities on a surface thereof, an alkaline catalyst solution L 1 containing a complex of a palladium ion and a monocyclic 5- or 6-membered aromatic or aliphatic heterocyclic compound having one or two nitrogen atoms as a heteroatom, a catalyst layer 91 is formed on a surface of the impurity-doped polysilicon film 90 of the substrate W 1 . After the catalyst solution L 1 is supplied, an electroless plating layer 92 is formed on the catalyst layer 91 formed on a substrate W 2 by supplying a plating liquid M 1 from the plating liquid supply unit 45 onto the substrate W 2.

We claim: 
     
         1 . A plasma processing apparatus configured to perform a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities, the substrate processing apparatus comprising:
 a catalyst solution supply unit configured to supply, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom;   a plating liquid supply unit configured to supply a plating liquid onto the substrate; and   a controller configured to control operations of the catalyst solution supply unit and the plating liquid supply unit,   wherein the controller controls the catalyst solution supply unit and the plating liquid supply unit such that the catalyst solution is supplied onto the substrate by the catalyst solution supply unit and, after the catalyst solution is supplied, the plating liquid is supplied onto the substrate by the plating liquid supply unit.   
     
     
         2 . The substrate processing apparatus of  claim 1 ,
 wherein the substrate further includes a base member and an insulating film formed between the base member and the impurity-doped polysilicon film.   
     
     
         3 . The substrate processing apparatus of  claim 1 ,
 wherein the heterocyclic compound is selected from a group consisting of pyrroline, pyrrole, imidazoline, imidazole, pyrazoline, pyrazole, pyridine, pyridazine, pyrimidine, pyrazine, pyrrolidine, imidazolidine, pyrazolidine, piperidine and piperazine.   
     
     
         4 . The substrate processing apparatus of  claim 1 ,
 wherein the heterocyclic compound has a substituent selected from a group consisting of a hydroxyl group, a carboxyl group and a sulfate group.   
     
     
         5 . A substrate processing method of performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities, the substrate processing method comprising:
 forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and   forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.   
     
     
         6 . The substrate processing method of  claim 5 ,
 wherein the substrate further includes a base member and an insulating film formed between the base member and the impurity-doped polysilicon film.   
     
     
         7 . The substrate processing method of  claim 5 ,
 wherein the heterocyclic compound is selected from a group consisting of pyrroline, pyrrole, imidazoline, imidazole, pyrazoline, pyrazole, pyridine, pyridazine, pyrimidine, pyrazine, pyrrolidine, imidazolidine, pyrazolidine, piperidine and piperazine.   
     
     
         8 . The substrate processing method of  claim 5 ,
 wherein the heterocyclic compound has a substituent selected from a group consisting of a hydroxyl group, a carboxyl group and a sulfate group.   
     
     
         9 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a substrate processing apparatus to perform a substrate processing method as claimed in  claim 5 .