Amorphous Layer Extreme Ultraviolet Lithography Blank, And Manufacturing And Lithography Systems Therefor
Abstract
An integrated extreme ultraviolet blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer. A physical vapor deposition chamber for manufacturing an extreme ultraviolet mask blank includes: a target, comprising molybdenum alloyed with boron. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and a wafer stage for placing a wafer. An extreme ultraviolet blank includes: a substrate; a multi-layer stack having an amorphous metallic layer; and capping layers over the multi-layer stack.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An integrated extreme ultraviolet blank production system comprising:
a vacuum chamber for placing a substrate in a vacuum; a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer.
2 . The system as claimed in claim 1 wherein the treatment system includes an alloyed deposition of the amorphous metallic layer.
3 . The system as claimed in claim 1 wherein the treatment system provides a gas to disrupt a crystalline structure of the amorphous metallic layer.
4 . The system as claimed in claim 1 wherein the treatment system cools the multi-layer stack to suppress grain growth of the amorphous metallic layer.
5 . The system as claimed in claim 1 wherein the deposition system includes a magnetron for sputtering the multi-layer stack.
6 . The system as claimed in claim 1 further comprising a second deposition system is for depositing additional layers to form an extreme ultraviolet mask blank.
7 . The system as claimed in claim 1 further comprising a second deposition system is for depositing additional layers to form an extreme ultraviolet mirror.
8 . A physical vapor deposition chamber for manufacturing an extreme ultraviolet blank comprising:
a target, comprising molybdenum alloyed with boron.
9 . The chamber of claim 8 further comprising:
a second target, comprising silicon.
10 . The chamber of claim 9 wherein the target and the second target are angled with respect to a pedestal adapted to receive a substrate.
11 . The chamber of claim 8 further comprising a rotating pedestal adapted to receive a substrate.
12 . An extreme ultraviolet lithography system comprising:
an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and a wafer stage for placing a wafer.
13 . The system as claimed in claim 12 wherein the amorphous metallic layer is alloyed to form the amorphous metallic layer.
14 . The system as claimed in claim 12 wherein the amorphous metallic layer has a disrupted crystalline structure to form the amorphous metallic layer.
15 . The system as claimed in claim 12 wherein the amorphous metallic layer has suppressed grain growth to form the amorphous metallic layer.
16 . A method of making an extreme ultraviolet blank comprising:
providing a substrate; forming a multi-layer stack having an amorphous metallic layer over the substrate;
and
forming capping layers over the multi-layer stack.
17 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer forms an alloyed amorphous metallic layer.
18 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer deposits the amorphous metallic layer by sputtering the metal with an alloy.
19 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer deposits the amorphous metallic layer by sputtering while cooling the substrate.
20 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer forms the amorphous metallic layer alloyed with boron, nitrogen, or carbon.
21 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer forms the amorphous metallic layer of amorphous molybdenum.
22 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer forms the amorphous metallic layer of a disrupted crystalline structure.
23 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer forms the amorphous metallic layer having suppressed grain growth.
24 . The method as claimed in claim 16 wherein forming the multi-layer stack forms an extreme ultraviolet mask blank.
25 . The method as claimed in claim 16 wherein forming the multi-layer stack forms an extreme ultraviolet mirror.
26 . The method as claimed in claim 16 wherein providing the substrate provides a substrate of an ultra-low thermal expansion material.
27 . The method as claimed in claim 16 wherein providing the substrate provides a substrate of glass.Join the waitlist — get patent alerts
Track US2017168383A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.